| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRFR024TR | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th 文件：1.98595 Mbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFR024TR | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th 文件：4.50222 Mbytes 頁數(shù)：7 Pages | KERSEMI | KERSEMI | |
IRFR024TR | Power MOSFET 文件：1.16522 Mbytes 頁數(shù)：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th 文件：1.98595 Mbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th 文件：4.50222 Mbytes 頁數(shù)：7 Pages | KERSEMI | KERSEMI | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th 文件：4.50222 Mbytes 頁數(shù)：7 Pages | KERSEMI | KERSEMI | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th 文件：1.98595 Mbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET 文件：1.16522 Mbytes 頁數(shù)：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET 文件：1.06651 Mbytes 頁數(shù)：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET 文件：1.16522 Mbytes 頁數(shù)：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
詳細參數(shù)
- 型號：
IRFR024TR
- 功能描述：
MOSFET N-Chan 60V 14 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
IR |
2450+ |
TO-252 |
9850 |
只做原裝正品現(xiàn)貨或訂貨假一賠十! |
詢價 | ||
IR |
06+ |
原廠原裝 |
4446 |
只做全新原裝真實現(xiàn)貨供應 |
詢價 | ||
IR |
24+ |
TO-252 |
30000 |
詢價 | |||
IR |
23+ |
TO-252 |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣! |
詢價 | ||
IR |
25+23+ |
TO-252 |
27842 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
IR |
2447 |
TO-252 |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
VISHAY |
25+ |
TO-252 |
3000 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
IR |
23+ |
SOT-252 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
IR |
25+ |
TO-252 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 |
相關(guān)規(guī)格書
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