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          首頁 >IRFR024>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IRFR024

          HEXFET POWER MOSFET

          Infineon

          英飛凌

          IRFR024_V01

          Power MOSFET

          FEATURES ? Dynamic dV/dt rating ? Surface-mount (IRFR024, SiHFR024) ? Straight lead (IRFU024, SiHFU024) ? Available in tape and reel ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99

          文件:1.06651 Mbytes 頁數(shù):13 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRFR024N

          Ultra Low On-Resistance

          Description The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. ● Ultr

          文件:942.95 Kbytes 頁數(shù):10 Pages

          KERSEMI

          IRFR024N

          MOSFET

          Description The D-PAK is designed for surface mounting using vapor phase, infrared,or wave soldering technigues. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Features VDS (V) = 55V ID = 17A (VGS = 10V) RDS(ON) =75mW (VGS = 10V)

          文件:466.35 Kbytes 頁數(shù):7 Pages

          EVVOSEMI

          翊歐

          IRFR024NPBF

          Ultra Low On-Resistance

          Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

          文件:4.03053 Mbytes 頁數(shù):10 Pages

          KERSEMI

          IRFR024NPBF

          HEXFET Power MOSFET

          Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

          文件:401.32 Kbytes 頁數(shù):10 Pages

          IRF

          IRFR024NTR

          The D-PAK is designed for surface mounting using vapor phase, infrared,or wave soldering technigues.

          Features VDS (V) = 55V ID = 17A (VGS = 10V) RDS(ON) =75mW (VGS = 10V)

          文件:537.48 Kbytes 頁數(shù):7 Pages

          UMW

          友臺半導體

          IRFR024NTR

          MOSFET

          Description The D-PAK is designed for surface mounting using vapor phase, infrared,or wave soldering technigues. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Features VDS (V) = 55V ID = 17A (VGS = 10V) RDS(ON) =75mW (VGS = 10V)

          文件:466.35 Kbytes 頁數(shù):7 Pages

          EVVOSEMI

          翊歐

          IRFR024PBF

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

          文件:4.50222 Mbytes 頁數(shù):7 Pages

          KERSEMI

          IRFR024PBF

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

          文件:1.98595 Mbytes 頁數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          技術參數(shù)

          • OPN:

            IRFR024NTRLPBF/IRFR024NTRPBF

          • Qualification:

            Non-Automotive

          • Package name:

            DPAK/DPAK

          • VDS max:

            55 V

          • RDS (on) @10V max:

            75 m?/75 m?

          • ID @25°C max:

            17 A/17 A

          • QG typ @10V:

            13.3 nC/13.3 nC

          • Polarity:

            N

          • VGS(th) min:

            2 V/2 V

          • VGS(th) max:

            4 V/4 V

          • VGS(th):

            3 V/3 V

          • Technology:

            IR MOSFET?/IR MOSFET?

          供應商型號品牌批號封裝庫存備注價格
          IR
          最新
          1000
          原裝正品現(xiàn)貨
          詢價
          IR
          2024+
          N/A
          70000
          柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
          詢價
          IR
          24+
          TO-252
          1000
          詢價
          IR
          24+/25+
          2590
          原裝正品現(xiàn)貨庫存價優(yōu)
          詢價
          IR
          2015+
          TO-252
          19889
          一級代理原裝現(xiàn)貨,特價熱賣!
          詢價
          IR
          05+
          TO-252
          15000
          原裝進口
          詢價
          IR
          12+
          TO-252
          15000
          全新原裝,絕對正品,公司現(xiàn)貨供應。
          詢價
          IR
          24+
          原廠封裝
          3488
          原裝現(xiàn)貨假一罰十
          詢價
          IR
          25+
          TO-252
          700
          百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
          詢價
          IR
          24+
          TO-252
          5000
          全現(xiàn)原裝公司現(xiàn)貨
          詢價
          更多IRFR024供應商 更新時間2026-1-19 10:28:00
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