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    IRFR024N
    Ultra Low On-Resistance
    
Description
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
● Ultr
    文件：942.95 Kbytes 頁數(shù)：10 Pages
    KERSEMI
    

    IRFR024N
    MOSFET
    
Description
The D-PAK is designed for surface mounting
using vapor phase, infrared,or wave soldering
technigues. Power dissipation levels up to 1.5
watts are possible in typical surface mount applications.

Features
VDS (V) = 55V
ID = 17A (VGS = 10V)
RDS(ON) =75mW (VGS = 10V)
    文件：466.35 Kbytes 頁數(shù)：7 Pages
    EVVOSEMI
    翊歐
    

    IRFR024N
    Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=17A??
    文件：178.33 Kbytes 頁數(shù)：10 Pages
    IRF
    

    IRFR024N
    N-Channel MOSFET Transistor
    文件：335.19 Kbytes 頁數(shù)：2 Pages
    ISC
    無錫固電
    

    IRFR024NPBF
    HEXFET Power MOSFET
    
Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,
    文件：401.32 Kbytes 頁數(shù)：10 Pages
    IRF
    

    IRFR024NPBF
    Ultra Low On-Resistance
    
Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,
    文件：4.03053 Mbytes 頁數(shù)：10 Pages
    KERSEMI
    

    IRFR024NTR
    The D-PAK is designed for surface mounting using vapor phase, infrared,or wave soldering technigues.
    
Features
VDS (V) = 55V
ID = 17A (VGS = 10V)
RDS(ON) =75mW (VGS = 10V)
    文件：537.48 Kbytes 頁數(shù)：7 Pages
    UMW
    友臺(tái)半導(dǎo)體
    

    IRFR024NTR
    MOSFET
    
Description
The D-PAK is designed for surface mounting
using vapor phase, infrared,or wave soldering
technigues. Power dissipation levels up to 1.5
watts are possible in typical surface mount applications.

Features
VDS (V) = 55V
ID = 17A (VGS = 10V)
RDS(ON) =75mW (VGS = 10V)
    文件：466.35 Kbytes 頁數(shù)：7 Pages
    EVVOSEMI
    翊歐
    

    IRFR024NPBF
    Ultra Low On-Resistance
    文件：4.00212 Mbytes 頁數(shù)：10 Pages
    KERSEMI
    

    IRFR024NPBF
    ULTRA LOW ON RESISTANCE
    文件：406.05 Kbytes 頁數(shù)：11 Pages
    IRF
    

    
            
    
		
        
    
            
    
                
    技術(shù)參數(shù)
    
            
    
            
      
            	
    • OPN：
      IRFR024NTRLPBF/IRFR024NTRPBF
    • Qualification：
      Non-Automotive
    • Package name：
      DPAK/DPAK
    • VDS max：
      55 V
    • RDS (on) @10V max：
      75 m?/75 m?
    • ID  @25°C max：
      17 A/17 A
    • QG typ @10V：
      13.3 nC/13.3 nC
    • Polarity：
      N
    • VGS(th) min：
      2 V/2 V
    • VGS(th) max：
      4 V/4 V
    • VGS(th)：
      3 V/3 V
    • Technology：
      IR MOSFET?/IR MOSFET?
    
            
    
        
    
            
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    IR
    		

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    更多IRFR024N供應(yīng)商
            更新時(shí)間2026-1-22 13:31:00
        
    
        
    
          
    
            
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