絲?。?strong>IRFR024；Package：TO252-2L；N-Channel Enhancement Mode MOSFET

Description The IRFR024NT uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 60V ID =30 A RDS(ON)

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EVVOSEMI

翊歐

絲?。?strong>IRFR024；Package：TO252-2L；N-Channel Enhancement Mode MOSFET

Description The IRFR024NT uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 60V ID =30 A RDS(ON)

文件：853.58 Kbytes 頁數(shù)：5 Pages

EVVOSEMI

翊歐

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

文件：4.50222 Mbytes 頁數(shù)：7 Pages

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

文件：1.98595 Mbytes 頁數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES ? Dynamic dV/dt rating ? Surface-mount (IRFR024, SiHFR024) ? Straight lead (IRFU024, SiHFU024) ? Available in tape and reel ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99

文件：1.06651 Mbytes 頁數(shù)：13 Pages

VISHAYVishay Siliconix

威世威世科技公司

HEXFET POWER MOSFET

Description Fifth Generation HEXFETs from International Rectifier provide the designed with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techni

文件：172.77 Kbytes 頁數(shù)：6 Pages

IRF

Power MOSFET

FEATURES ? Dynamic dV/dt rating ? Surface-mount (IRFR024, SiHFR024) ? Straight lead (IRFU024, SiHFU024) ? Available in tape and reel ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99

文件：1.06651 Mbytes 頁數(shù)：13 Pages

VISHAYVishay Siliconix

威世威世科技公司

Ultra Low On-Resistance

Description The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. ● Ultr

文件：942.95 Kbytes 頁數(shù)：10 Pages

KERSEMI

MOSFET

Description The D-PAK is designed for surface mounting using vapor phase, infrared,or wave soldering technigues. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Features VDS (V) = 55V ID = 17A (VGS = 10V) RDS(ON) =75mW (VGS = 10V)

文件：466.35 Kbytes 頁數(shù)：7 Pages

EVVOSEMI

翊歐

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

文件：4.03053 Mbytes 頁數(shù)：10 Pages

KERSEMI