| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲印:IRFR5505;Package:TO-252;-60V P -Channel Enhancement Mode MOSFET General Features VDS = -60V ID =-10 A RDS(ON) 文件:2.9483 Mbytes 頁(yè)數(shù):5 Pages | UMW 友臺(tái)半導(dǎo)體 | UMW | ||
絲?。?strong>IRFR5505;Package:TO-252;-60V P -Channel Enhancement Mode MOSFET Description The uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -60V ID =-10 A RDS(ON) 文件:1.43536 Mbytes 頁(yè)數(shù):5 Pages | EVVOSEMI 翊歐 | EVVOSEMI | ||
絲印:IRFR5505;Package:TO-252;-60V P -Channel Enhancement Mode MOSFET Description The uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -60V ID =-10 A RDS(ON) 文件:1.43536 Mbytes 頁(yè)數(shù):5 Pages | EVVOSEMI 翊歐 | EVVOSEMI | ||
絲?。?strong>IRFR5505;Package:TO-252;-60V P -Channel Enhancement Mode MOSFET General Features VDS = -60V ID =-10 A RDS(ON) 文件:2.9483 Mbytes 頁(yè)數(shù):5 Pages | UMW 友臺(tái)半導(dǎo)體 | UMW | ||
IRFR5505 | -60V P -Channel Enhancement Mode MOSFET Description The uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -60V ID =-10 A RDS(ON) 文件:1.43536 Mbytes 頁(yè)數(shù):5 Pages | EVVOSEMI 翊歐 | EVVOSEMI | |
Ultra Low On-Resistance VDSS = -55V RDS(on) = 0.11? ID = -18A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design th 文件:1.67771 Mbytes 頁(yè)數(shù):10 Pages | IRF | IRF | ||
Ultra Low On-Resistance Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件:1.40006 Mbytes 頁(yè)數(shù):10 Pages | IRF | IRF | ||
IRFR5505 | Power MOSFET(Vdss=-55V, Rds(on)=0.11ohm, Id=-18A) 文件:108.01 Kbytes 頁(yè)數(shù):10 Pages | IRF | IRF | |
IRFR5505 | Ultra Low On-Resistance 文件:720.54 Kbytes 頁(yè)數(shù):10 Pages | KERSEMI | KERSEMI | |
ultra low on-resistance 文件:1.64904 Mbytes 頁(yè)數(shù):10 Pages | IRF | IRF |
詳細(xì)參數(shù)
- 型號(hào):
IRFR5505
- 制造商:
International Rectifier
- 功能描述:
MOSFET, P-CHANNEL, -55V, -18A, 110 mOhm, 21.3 nC Qg, D-Pak
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
2015+ |
D-Pak |
19889 |
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣(mài)! |
詢(xún)價(jià) | ||
IR |
1215+ |
SOT252 |
150000 |
全新原裝,絕對(duì)正品,公司大量現(xiàn)貨供應(yīng). |
詢(xún)價(jià) | ||
IOR |
25+ |
TO252 |
40 |
現(xiàn)貨 |
詢(xún)價(jià) | ||
VBsemi(臺(tái)灣微碧) |
2447 |
TO-252 |
105000 |
2500個(gè)/圓盤(pán)一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨, |
詢(xún)價(jià) | ||
IR |
25+ |
TO-252-2 |
12721 |
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件! |
詢(xún)價(jià) | ||
IR |
23+ |
TO-252-2 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢(xún)價(jià) | ||
IR |
22+ |
TO-252 |
6000 |
十年配單,只做原裝 |
詢(xún)價(jià) | ||
IR |
03+ |
TO252 |
600 |
一級(jí)代理,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力 |
詢(xún)價(jià) | ||
IR |
PBF |
56520 |
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨 |
詢(xún)價(jià) | |||
INTERNATIONAL RECTIFIER |
2023+ |
SMD |
1100 |
安羅世紀(jì)電子只做原裝正品貨 |
詢(xún)價(jià) |
相關(guān)芯片絲印
更多- IRFR9024NTR
- IRFR9120NTR
- IRL60SC216
- IRLR3410
- IRLR8726TR
- AAT3123ITP-20-T1
- ISL94216AIRZ-T
- TLV803ED17DPWR
- SMAJ17A
- TLV803ED17DPWR
- TLV803ED17DPWR
- SMAJ18
- ISO1540D
- ISO1540DR.A
- ISO1540DRG4.A
- ISO1540DR
- ISO1540DRG4
- ISO1541D
- ISO1541DR.A
- ISO1541DRG4.A
- ISO1541DR
- ISO1541DRG4
- SC18IS602BIPW/S8
- SC16IS741AIPW
- ISO7420D.A
- ISO7420DR
- ISO7420DR.B
- ISO7420D.A
- ISO7420DR.A
- ISO7421D.A
- ISO7421DR
- ISO7421DR.B
- ISO7421DRG4.B
- IS82C50A-5Z
- IS82C52Z
- ISA07N65A
- ISJ4N65
- ISJ4N65
- ISJ4N65
- ISL12022MAIBZ
- ISL12022MIBZ
- ISL12022MIBZ-T
- ISL12022MIBZR5421
- ISL1902FAZ
- ISL2101010EV1Z
相關(guān)庫(kù)存
更多- IRFR9024NTR
- IRFR9120N
- IRLL110TR
- IRLR8726TR
- SMAJ17A-Q
- KTZ8812EUO-TR
- SMA9.0A
- 1SMA6.5
- TLV803ED17DPWR
- TLV803ED17DPWR
- TLV803ED17DPWR
- P4SMAJ18
- ISO1540DR
- ISO1540DR.B
- ISO1540DRG4.B
- ISO1540DR.A
- ISO1540DRG4.A
- ISO1541DR
- ISO1541DR.B
- ISO1541DRG4.B
- ISO1541DR.A
- ISO1541DRG4.A
- SC18IS602BIPWSLASHS8
- ISO7420D
- ISO7420D.B
- ISO7420DR.A
- ISO7420D
- ISO7420DR
- ISO7421D
- ISO7421D.B
- ISO7421DR.A
- ISO7421DRG4.A
- ISO7421D
- IS82C52
- ISA04N60A
- ISJ4N65
- ISJ4N65
- ISJ4N65
- ISL12020MIRZ
- ISL12022MAIBZ-T
- ISL12022MIBZ
- ISL12022MIBZ-TR5421
- ISL1801IVZ
- ISL2101015EV1Z
- ISL2101012EV1Z

