| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRFR024 | 絲?。?strong>IRFR024；Package：TO252-2L；N-Channel Enhancement Mode MOSFET Description The IRFR024NT uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 60V ID =30 A RDS(ON) 文件：853.58 Kbytes 頁(yè)數(shù)：5 Pages | EVVOSEMI 翊歐 | EVVOSEMI | |
IRFR024 | 絲?。?strong>IRFR024；Package：TO252-2L；N-Channel Enhancement Mode MOSFET Description The IRFR024NT uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 60V ID =30 A RDS(ON) 文件：853.58 Kbytes 頁(yè)數(shù)：5 Pages | EVVOSEMI 翊歐 | EVVOSEMI | |
IRFR024 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th 文件：4.50222 Mbytes 頁(yè)數(shù)：7 Pages | KERSEMI | KERSEMI | |
IRFR024 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th 文件：1.98595 Mbytes 頁(yè)數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFR024 | Power MOSFET FEATURES ? Dynamic dV/dt rating ? Surface-mount (IRFR024, SiHFR024) ? Straight lead (IRFU024, SiHFU024) ? Available in tape and reel ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99 文件：1.06651 Mbytes 頁(yè)數(shù)：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFR024 | HEXFET POWER MOSFET Description Fifth Generation HEXFETs from International Rectifier provide the designed with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techni 文件：172.77 Kbytes 頁(yè)數(shù)：6 Pages | IRF | IRF | |
Power MOSFET FEATURES ? Dynamic dV/dt rating ? Surface-mount (IRFR024, SiHFR024) ? Straight lead (IRFU024, SiHFU024) ? Available in tape and reel ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99 文件：1.06651 Mbytes 頁(yè)數(shù)：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Ultra Low On-Resistance Description The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. ● Ultr 文件：942.95 Kbytes 頁(yè)數(shù)：10 Pages | KERSEMI | KERSEMI | ||
MOSFET Description The D-PAK is designed for surface mounting using vapor phase, infrared,or wave soldering technigues. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Features VDS (V) = 55V ID = 17A (VGS = 10V) RDS(ON) =75mW (VGS = 10V) 文件：466.35 Kbytes 頁(yè)數(shù)：7 Pages | EVVOSEMI 翊歐 | EVVOSEMI | ||
Ultra Low On-Resistance Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, 文件：4.03053 Mbytes 頁(yè)數(shù)：10 Pages | KERSEMI | KERSEMI |
詳細(xì)參數(shù)
- 型號(hào)：
IRFR024
- 功能描述：
MOSFET N-Chan 60V 14 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
最新 |
1000 |
原裝正品現(xiàn)貨 |
詢(xún)價(jià) | |||
IR |
2024+ |
N/A |
70000 |
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng) |
詢(xún)價(jià) | ||
IR |
24+ |
TO-252 |
1000 |
詢(xún)價(jià) | |||
IR |
24+/25+ |
2590 |
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu) |
詢(xún)價(jià) | |||
IR |
2015+ |
TO-252 |
19889 |
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣(mài)! |
詢(xún)價(jià) | ||
IR |
05+ |
TO-252 |
15000 |
原裝進(jìn)口 |
詢(xún)價(jià) | ||
IR |
12+ |
TO-252 |
15000 |
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。 |
詢(xún)價(jià) | ||
IR |
24+ |
原廠封裝 |
3488 |
原裝現(xiàn)貨假一罰十 |
詢(xún)價(jià) | ||
IR |
25+ |
TO-252 |
700 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢(xún)價(jià) | ||
IR |
24+ |
TO-252 |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢(xún)價(jià) |
相關(guān)芯片絲印
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- SC18IS602BIPW/S8
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相關(guān)庫(kù)存
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- IRLL110TR
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- SMAJ17A-Q
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- SMA9.0A
- 1SMA6.5
- TLV803ED17DPWR
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- TLV803ED17DPWR
- P4SMAJ18
- ISO1540DR
- ISO1540DR.B
- ISO1540DRG4.B
- ISO1540DR.A
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- ISO1541DR.A
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- SC18IS602BIPWSLASHS8
- ISO7420D
- ISO7420D.B
- ISO7420DR.A
- ISO7420D
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- ISO7421D
- ISO7421D.B
- ISO7421DR.A
- ISO7421DRG4.A
- ISO7421D
- IS82C52
- ISA04N60A
- ISJ4N65
- ISJ4N65
- ISJ4N65
- ISL12020MIRZ
- ISL12022MAIBZ-T
- ISL12022MIBZ
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