Power MOSFET(Vdss=500V, Rds(on)max=0.24ohm, Id=20A)

SMPS MOSFET Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current Effective Coss specified ( See AN1001) Applications Switch Mode Power Supply

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IRF

Power MOSFET

Power MOSFET FEATURES ? Low Gate Charge QgResults in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Effective CossSpecified ? Lead (Pb)-free Available APPLICATIONS

文件：162.55 Kbytes 頁(yè)數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

HEXFET Power MOSFET

Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss specified ( See AN1001) Applications ● Switch Mode Power Supply ( SMPS ) ● Uninterru

文件：150.06 Kbytes 頁(yè)數(shù)：8 Pages

IRF

Power MOSFET(Vdss=500V, Rds(on)=0.27ohm, Id=20A)

Description Third Generation HEXFET?s from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power level

文件：174.81 Kbytes 頁(yè)數(shù)：8 Pages

IRF

Dynamic dv/dt Rating, Repetitive Avalanche Rated, Isolated Central Mounting Hole, Fast Switching, Ease of Paralleling, Simple Drive Requirements, Lead

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IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude t

文件：135.66 Kbytes 頁(yè)數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

20A,500V Heatsink N-Channel Type Power MOSFET

General Description This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technol ogy intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-3P

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THINKISEMI

思祁半導(dǎo)體

Power MOSFET

文件：169.48 Kbytes 頁(yè)數(shù)：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：203.58 Kbytes 頁(yè)數(shù)：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

isc N-Channel MOSFET Transistor

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ISC

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