PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications. The IRFP460 is supplied i

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PHI

PHI

20A, 500V, 0.270 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

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INTERSIL

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude t

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VISHAYVishay Siliconix

威世威世科技公司

MegaMOS - Power MOSFET

MegaMOS? Power MOSFET N-Channel Enhancement Mode, HDMOS? Family Features ● Repetitive avalanche energy rated ● Fast switching times ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● High Commutating dv/dt Rating Applications ● Switching Power Supplies ● Motor contr

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IXYS

艾賽斯

Power MOSFET(Vdss=500V, Rds(on)=0.27ohm, Id=20A)

Features ● Dynamic dv/dt Rating ● Repetitive Avalanche Rated ● Isolated Central Mouting Hole ● Fast Switching ● Ease of Paralleling ● Simple Drive Requirements.

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IRF

isc N-Channel MOSFET Transistor

DESCRIPTION ? Designed for use in switch mode power supplies and general purpose applications. FEATURES ? Drain Current –ID= 20A@ TC=25℃ ? Drain Source Voltage- : VDSS= 500V(Min) ? Static Drain-Source On-Resistance : RDS(on) = 0.27Ω(Max) ? Fast Switching

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ISC

無錫固電

N - CHANNEL 500V - 0.22 ohm - 20 A - TO-247 PowerMESH] MOSFET

DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY? process. This technology matches and improves the performances compared with standard parts from various sources. ■ TYPICAL RDS(on) = 0.22 ? ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 100 AVALA

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STMICROELECTRONICS

意法半導體

SEMICONDUCTORS

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ETCList of Unclassifed Manufacturers

未分類制造商

Power MOSFET

文件：169.48 Kbytes 頁數(shù)：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

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VISHAYVishay Siliconix

威世威世科技公司