20A, 500V, 0.270 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching re ? 20A, 500V\n? rDS(ON) = 0.270?\n? Single Pulse Avalanche Energy Rated\n? SOA is Power Dissipation Limited\n? Nanosecond Switching Speeds\n? Linear Transfer Characteristics\n? High Input Impedance\n? Related Literature\n?? - TB334 “Guidelines for Soldering Surface Mount\n????? Components to PC Board;

Renesas

瑞薩

N-Channel: Standard Power MOSFETs

·Breakdown voltages (VDSS) up to 4500V\n·Current ratings (ID25) ranging from 100mA to 250A\n·Ultra-low RDS(on) - as low as 7.5 milliohm\n·High power density\n·Easy to mount\n·PCB space savings\n·International standard and proprietary high voltage packages;

Littelfuse

力特

Power MOSFET

? Dynamic dV/dt rating\n? Repetitive avalanche rated\n? Isolated central mounting hole;

Vishay

威世

Power MOSFET(Vdss=500V, Rds(on)max=0.27ohm, Id=20A)

Applications ? Switch Mode Power Supply ( SMPS ) ? Uninterruptable Power Supply ? High speed power switching Benefits ? Low Gate Charge Qg results in Simple Drive Requirement ? Improved Gate, Avalanche and dynamic dv/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and

文件：95.34 Kbytes 頁數(shù)：8 Pages

IRF

Power MOSFET

FEATURES ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Effective Coss Specified ? Compliant to RoHS Directive 2002/95/EC APPLICATIONS ? Switch Mode Power

文件：144.68 Kbytes 頁數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES ? Low gate charge Qg results in simple drive requirement ? Improved gate, avalanche and dynamic dV/dt ruggedness ? Fully characterized capacitance and avalanche voltage and current ? Effective Coss specified ? Material categorization: for definitions of compliance please see www.

文件：212.87 Kbytes 頁數(shù)：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES ? Low gate charge Qg results in simple drive requirement ? Improved gate, avalanche and dynamic dV/dt ruggedness ? Fully characterized capacitance and avalanche voltage and current ? Effective Coss specified ? Material categorization: for definitions of compliance please see www.

文件：212.87 Kbytes 頁數(shù)：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=500V, Rds(on)max=0.27ohm, Id=20A)

Description Third Generation HEXFET?s from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power level

文件：115.74 Kbytes 頁數(shù)：8 Pages

IRF

D Series Power MOSFETs

FEATURES ? Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS) ? Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry - Low Figure-of-Merit (

文件：214.41 Kbytes 頁數(shù)：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

D Series Power MOSFET

FEATURES ? Optimal Design ?? - Low Area Specific On-Resistance ?? - Low Input Capacitance (Ciss) ?? - Reduced Capacitive Switching Losses ?? - High Body Diode Ruggedness ?? - Avalanche Energy Rated (UIS) ? Optimal Efficiency and Operation ?? - Low Cost ?? - Simple Gate Drive Circuitry ??

文件：186.09 Kbytes 頁數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司