D Series Power MOSFETs

FEATURES ? Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS) ? Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry - Low Figure-of-Merit (

文件：214.41 Kbytes 頁數(shù)：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

D Series Power MOSFET

FEATURES ? Optimal Design ?? - Low Area Specific On-Resistance ?? - Low Input Capacitance (Ciss) ?? - Reduced Capacitive Switching Losses ?? - High Body Diode Ruggedness ?? - Avalanche Energy Rated (UIS) ? Optimal Efficiency and Operation ?? - Low Cost ?? - Simple Gate Drive Circuitry ??

文件：188.95 Kbytes 頁數(shù)：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：721.35 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

Power MOSFET

FEATURES ? Low figure-of-merit (FOM) Ron x Qg ? Low effective capacitance (Co(er)) ? Reduced switching and conduction losses ? Avalanche energy rated (UIS) ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS ? Server and telecom power

文件：181.32 Kbytes 頁數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=500V, Rds(on)=0.27ohm, Id=20A)

Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. The

文件：338.84 Kbytes 頁數(shù)：8 Pages

IRF

Power MOSFET

DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFETs technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. The

文件：1.10532 Mbytes 頁數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

isc N-Channel MOSFET Transistor

DESCRIPTION ? Designed for use in switch mode power supplies and general purpose applications. FEATURES ? Drain Current –ID= 20A@ TC=25℃ ? Drain Source Voltage- : VDSS= 500V(Min) ? Static Drain-Source On-Resistance : RDS(on) = 0.27Ω (Max) ? Fast Switching

文件：171 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Power MOSFET

DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFETs technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. The

文件：1.10532 Mbytes 頁數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

HEXFET Power MOSFET

Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. The

文件：181.53 Kbytes 頁數(shù)：8 Pages

IRF

Power MOSFET

Power MOSFET FEATURES ? Low Gate Charge QgResults in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Effective CossSpecified ? Lead (Pb)-free Available APPLICATIONS

文件：162.55 Kbytes 頁數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司