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    首頁(yè) >IRFI644>規(guī)格書(shū)列表

    型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

    IRFI644

    250V N-Channel MOSFET

    General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

    文件:685.47 Kbytes 頁(yè)數(shù):9 Pages

    FAIRCHILD

    仙童半導(dǎo)體

    IRFI644

    Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=7.9A)

    HEXFET Power MOSFET

    文件:174.94 Kbytes 頁(yè)數(shù):6 Pages

    IRF

    IRFI644

    250V N-Channel MOSFET

    ONSEMI

    安森美半導(dǎo)體

    IRFI644A

    Advanced Power MOSFET

    FEATURES ? Avalanche Rugged Technology ? Rugged Gate Oxide Technology ? Lower Input Capacitance ? Improved Gate Charge ? Extended Safe Operating Area ? Lower Leakage Current: 10μA (Max.) @ VDS= 250V ? Lower RDS(ON): 0.214?(Typ.)

    文件:229.46 Kbytes 頁(yè)數(shù):7 Pages

    FAIRCHILD

    仙童半導(dǎo)體

    IRFI644B

    250V N-Channel MOSFET

    General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

    文件:685.47 Kbytes 頁(yè)數(shù):9 Pages

    FAIRCHILD

    仙童半導(dǎo)體

    IRFI644G

    Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=7.9A)

    HEXFET Power MOSFET

    文件:174.94 Kbytes 頁(yè)數(shù):6 Pages

    IRF

    IRFI644G

    Power MOSFET

    DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES ? Isolated Package ? High Voltage Isolation = 2.5 kVRMS(t = 60 s;f = 60 Hz) ? Sink

    文件:1.41435 Mbytes 頁(yè)數(shù):8 Pages

    VISHAYVishay Siliconix

    威世威世科技公司

    IRFI644GPBF

    Power MOSFET

    DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES ? Isolated Package ? High Voltage Isolation = 2.5 kVRMS(t = 60 s;f = 60 Hz) ? Sink

    文件:1.41435 Mbytes 頁(yè)數(shù):8 Pages

    VISHAYVishay Siliconix

    威世威世科技公司

    IRFI644G

    Power MOSFET

    文件:702.01 Kbytes 頁(yè)數(shù):10 Pages

    VISHAYVishay Siliconix

    威世威世科技公司

    IRFI644G_V01

    Power MOSFET

    文件:702.01 Kbytes 頁(yè)數(shù):10 Pages

    VISHAYVishay Siliconix

    威世威世科技公司

    詳細(xì)參數(shù)

    • 型號(hào):

      IRFI644

    • 制造商:

      IRF

    • 制造商全稱:

      International Rectifier

    • 功能描述:

      Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=7.9A)

    供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
    IR
    TO-220F
    50000
    一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨
    詢價(jià)
    IR
    22+
    TO-220F
    6000
    終端可免費(fèi)供樣,支持BOM配單
    詢價(jià)
    VISHAY
    23+
    TO-220
    8560
    受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
    詢價(jià)
    IR
    23+
    TO-220F
    8000
    只做原裝現(xiàn)貨
    詢價(jià)
    IR
    23+
    TO-220F
    7000
    詢價(jià)
    INTERNATIONA
    06+
    原廠原裝
    27870
    只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
    詢價(jià)
    VISHAY
    24+/25+
    TO-220FP
    400
    原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)
    詢價(jià)
    IR
    24+
    TO-220F
    10500
    詢價(jià)
    IR
    2015+
    TO-220F
    12500
    全新原裝,現(xiàn)貨庫(kù)存長(zhǎng)期供應(yīng)
    詢價(jià)
    IR
    25+
    TO-220F
    53
    百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
    詢價(jià)
    更多IRFI644供應(yīng)商 更新時(shí)間2026-1-23 9:29:00

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