| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRFD210 | 0.6A, 200V, 1.500 Ohm, N-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching c 文件：52.32 Kbytes 頁(yè)數(shù)：6 Pages | INTERSIL | INTERSIL | |
IRFD210 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinat 文件：1.6013 Mbytes 頁(yè)數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFD210 | Power MOSFET FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? For automatic insertion ? End stackable ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third gene 文件：843.37 Kbytes 頁(yè)數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFD210 | 0.6A AND 0.45A, 150V AND 200V, 1.5 AND 2.4 OHM, N-CHANNEL POWER MOSFETS These are advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching 文件：360.56 Kbytes 頁(yè)數(shù)：6 Pages | HARRIS | HARRIS | |
IRFD210 | Power MOSFET(Vdss=200V, Rds(on)=1.5ohm, Id=0.60A) DESCRIPTION Third Generation Power MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in 文件：173.36 Kbytes 頁(yè)數(shù)：6 Pages | IRF | IRF | |
IRFD210 | Power MOSFET ? Dynamic dV/dt rating\n? Repetitive avalanche rated\n? For automatic insertion; | Vishay 威世 | Vishay | |
IRFD210 | 0.6A, 200V, 1.500 Ohm, N-Channel Power MOSFET | Renesas 瑞薩 | Renesas | |
Power MOSFET FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? For automatic insertion ? End stackable ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third gene 文件：843.37 Kbytes 頁(yè)數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
HEXFET Power MOSFET DESCRIPTION Third Generation Power MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in 文件：1.79775 Mbytes 頁(yè)數(shù)：8 Pages | IRF | IRF | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinat 文件：1.6013 Mbytes 頁(yè)數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
詳細(xì)參數(shù)
- 型號(hào)：
IRFD210
- 功能描述：
MOSFET N-Chan 200V 0.6 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
11+ |
DIP |
62000 |
原裝正品現(xiàn)貨優(yōu)勢(shì)18 |
詢價(jià) | ||
IR |
05+ |
DIP-4 |
6000 |
自己公司全新庫(kù)存絕對(duì)有貨 |
詢價(jià) | ||
IR |
24+/25+ |
1208 |
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu) |
詢價(jià) | |||
MOT |
2016+ |
DIP4 |
1023 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價(jià) | ||
IOR |
24+ |
DIP-4P |
79 |
詢價(jià) | |||
IR |
25+ |
DIP-4 |
2180 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢價(jià) | ||
har |
24+ |
N/A |
6980 |
原裝現(xiàn)貨,可開13%稅票 |
詢價(jià) | ||
IR |
25+ |
DIP-4 |
90000 |
一級(jí)代理商進(jìn)口原裝現(xiàn)貨、價(jià)格合理 |
詢價(jià) | ||
MOTOROLA |
19+ |
DIP4 |
8650 |
原裝正品,現(xiàn)貨熱賣 |
詢價(jià) | ||
IR |
23+ |
65480 |
詢價(jià) |
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