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          首頁 >IRFBE30S>規(guī)格書列表

          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IRFBE30S

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES ? Dynamic dV/dt Rating ? Repetitive Avalanche Rated ? Fast Switching ? Ease of P

          文件:1.20346 Mbytes 頁數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRFBE30S

          Power MOSFET

          FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note? * This datasheet provides information about parts that are? R

          文件:517.21 Kbytes 頁數(shù):11 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRFBE30S

          HEXFET? Power MOSFET

          Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. O Dynamic dv/dt Rating O Repetitive Avalanche Rated O Fast Switching O Ease of Pa

          文件:473.61 Kbytes 頁數(shù):6 Pages

          IRF

          IRFBE30S

          Power MOSFET

          文件:511.66 Kbytes 頁數(shù):11 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRFBE30S_V02

          Power MOSFET

          FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note? * This datasheet provides information about parts that are? R

          文件:517.21 Kbytes 頁數(shù):11 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRFBE30SPBF

          HEXFET Power MOSFET

          Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. O Dynamic dv/dt Rating O Repetitive Avalanche Rated O Fast Switching O Ease of Pa

          文件:588.09 Kbytes 頁數(shù):10 Pages

          IRF

          IRFBE30SPBF

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES ? Dynamic dV/dt Rating ? Repetitive Avalanche Rated ? Fast Switching ? Ease of P

          文件:1.20346 Mbytes 頁數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRFBE30SPBF

          Power MOSFET

          FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note? * This datasheet provides information about parts that are? R

          文件:517.21 Kbytes 頁數(shù):11 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRFBE30STRLPBF

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES ? Dynamic dV/dt Rating ? Repetitive Avalanche Rated ? Fast Switching ? Ease of P

          文件:1.20346 Mbytes 頁數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRFBE30STRLPBFA

          Power MOSFET

          FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note? * This datasheet provides information about parts that are? R

          文件:517.21 Kbytes 頁數(shù):11 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          詳細(xì)參數(shù)

          • 型號(hào):

            IRFBE30S

          • 功能描述:

            MOSFET N-Chan 800V 4.1 Amp

          • RoHS:

          • 制造商:

            STMicroelectronics

          • 晶體管極性:

            N-Channel

          • 汲極/源極擊穿電壓:

            650 V

          • 閘/源擊穿電壓:

            25 V

          • 漏極連續(xù)電流:

            130 A 電阻汲極/源極

          • RDS(導(dǎo)通):

            0.014 Ohms

          • 配置:

            Single

          • 安裝風(fēng)格:

            Through Hole

          • 封裝/箱體:

            Max247

          • 封裝:

            Tube

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
          IR
          12+
          TO-263
          15000
          全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。
          詢價(jià)
          IR
          24+
          D2-Pak
          8866
          詢價(jià)
          IR
          23+
          TO-263
          11846
          一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
          詢價(jià)
          AO
          23+
          TO252
          69820
          終端可以免費(fèi)供樣,支持BOM配單!
          詢價(jià)
          IR
          2447
          D2-PAK
          100500
          一級(jí)代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
          詢價(jià)
          VISHAY
          25+
          TO-263
          3000
          就找我吧!--邀您體驗(yàn)愉快問購元件!
          詢價(jià)
          IR
          25+
          D2-PAK
          10000
          原裝現(xiàn)貨假一罰十
          詢價(jià)
          Vishay Siliconix
          22+
          TO2633 D2Pak (2 Leads + Tab) T
          9000
          原廠渠道,現(xiàn)貨配單
          詢價(jià)
          IR
          22+
          D2-PAK
          8000
          原裝正品支持實(shí)單
          詢價(jià)
          Vishay Siliconix
          2022+
          TO-263-3,D2Pak(2 引線 + 接片
          38550
          全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
          詢價(jià)
          更多IRFBE30S供應(yīng)商 更新時(shí)間2026-1-20 11:03:00
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