P-CHANNEL POWER MOSFETS

FEATURES ? Low RDS(on) ? Improved inductive ruggedness ? Fsat switching times ? Rugged polysilicon gate cell structure ? Low input capacitance ? Extended safe operating area ? Improved high temperature reliability

文件：508.31 Kbytes 頁數(shù)：12 Pages

SAMSUNG

三星

-19A, -100V, 0.200 Ohm, P-Channel Power MOSFET

-19A, -100V, 0.200 Ohm, P-Channel Power MOSFET These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these pow

文件：59.31 Kbytes 頁數(shù)：7 Pages

INTERSIL

TRANSISTORS P-CHANNEL(Vdss=-100V, Rds(on)=0.2ohm, Id=-18A)

Product Summary The HEXFET? technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reve

文件：148.2 Kbytes 頁數(shù)：7 Pages

IRF

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -18A@ TC=25℃ · Drain Source Voltage -VDSS= -100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.2Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：309.4 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

P-CHANNEL POWER MOSFET

FEATURES ? HERMETICALLY SEALED TO–3 METAL PACKAGE ? SIMPLE DRIVE REQUIREMENTS ? SCREENING OPTIONS AVAILABLE

文件：22.16 Kbytes 頁數(shù)：2 Pages

SEME-LAB

Simple Drive Requirements

文件：152.35 Kbytes 頁數(shù)：7 Pages

IRF

isc N-Channel MOSFET Transistor

文件：290.73 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

HiRel MOSFETs

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Infineon

英飛凌

Simple Drive Requirements

文件：152.35 Kbytes 頁數(shù)：7 Pages

IRF

Single channel high reliability power MOSFETs

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Infineon

英飛凌