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          首頁 >IRF9952PBF>規(guī)格書列表

          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IRF9952PBF

          HEXFET Power MOSFET

          Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

          文件:224.24 Kbytes 頁數(shù):10 Pages

          IRF

          IRF9952PBF

          ULTRA LOW ON RESISTANCE

          文件:229.77 Kbytes 頁數(shù):10 Pages

          IRF

          IRF9952PBF_15

          ULTRA LOW ON RESISTANCE

          文件:229.77 Kbytes 頁數(shù):10 Pages

          IRF

          IRF9952QPBF

          HEXFET Power MOSFET

          Description These HEXFET? Power MOSFETs in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetit

          文件:280.44 Kbytes 頁數(shù):10 Pages

          IRF

          IRF9952QPBF

          Advanced Process Technology

          Description These HEXFET? Power MOSFETs in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetit

          文件:269.52 Kbytes 頁數(shù):10 Pages

          IRF

          IRF9952QTRPBF

          Advanced Process Technology

          Description These HEXFET? Power MOSFETs in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetit

          文件:269.52 Kbytes 頁數(shù):10 Pages

          IRF

          詳細(xì)參數(shù)

          • 型號(hào):

            IRF9952PBF

          • 功能描述:

            MOSFET 30V DUAL N/P CH 20V VGS MAX

          • RoHS:

          • 制造商:

            STMicroelectronics

          • 晶體管極性:

            N-Channel

          • 汲極/源極擊穿電壓:

            650 V

          • 閘/源擊穿電壓:

            25 V

          • 漏極連續(xù)電流:

            130 A 電阻汲極/源極

          • RDS(導(dǎo)通):

            0.014 Ohms

          • 配置:

            Single

          • 安裝風(fēng)格:

            Through Hole

          • 封裝/箱體:

            Max247

          • 封裝:

            Tube

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
          IR
          24+
          8-SOIC
          1710
          詢價(jià)
          Infineon
          24+
          NA
          3717
          進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)
          詢價(jià)
          International Rectifier
          2022+
          1491
          全新原裝 貨期兩周
          詢價(jià)
          IR
          24+
          65230
          詢價(jià)
          INFINEON
          25+
          SOP-8
          3000
          就找我吧!--邀您體驗(yàn)愉快問購元件!
          詢價(jià)
          Infineon
          22+
          NA
          2118
          加我QQ或微信咨詢更多詳細(xì)信息,
          詢價(jià)
          IR
          23+
          8-SOIC
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價(jià)
          IR
          25+
          8-SOIC
          10000
          原裝現(xiàn)貨假一罰十
          詢價(jià)
          Infineon Technologies
          22+
          8SO
          9000
          原廠渠道,現(xiàn)貨配單
          詢價(jià)
          IR
          23+
          8-SOIC
          21255
          原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
          詢價(jià)
          更多IRF9952PBF供應(yīng)商 更新時(shí)間2026-1-18 16:30:00
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