6A, 100V, 0.600 Ohm, P-Channel Power MOSFET

6A, 100V, 0.600 Ohm, P-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are P-Channel enhancement mode silicon gate power field effect transistors designed for applicati

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INTERSIL

Fast Switching

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

文件：282.59 Kbytes 頁數(shù)：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -6.8A@ TC=25℃ · Drain Source Voltage -VDSS= -100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.6Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.59 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Power MOSFET

文件：283.31 Kbytes 頁數(shù)：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：159.1 Kbytes 頁數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

6A, 100V, 0.600 Ohm, P-Channel Power MOSFET

This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching con ? 6A, 100V\n?rDS(ON)= 0.600?\n? Single Pulse Avalanche Energy Rated\n? SOA is Power Dissipation Limited\n? Nanosecond Switching Speeds\n? Linear Transfer Characteristics\n? High Input Impedance;

Renesas

瑞薩

Power MOSFET

? Dynamic dv/dt rating\n? Repetitive avalanche rated\n? P-channel;

Vishay

威世

Trans MOSFET P-CH 100V 6A 3-Pin(3+Tab) TO-220AB

NJS

Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

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IRF

Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：155.56 Kbytes 頁數(shù)：10 Pages

IRF