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          首頁 >絲印反查>IRF8313

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IRF8313

          絲?。?strong>IRF8313;Package:SOP-8;30V 2N-Channel Enhancement Mode MOSFET

          General Description The is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability ap

          文件:2.08671 Mbytes 頁數(shù):6 Pages

          UMW

          友臺半導(dǎo)體

          IRF8313

          絲?。?strong>IRF8313;Package:SOP-8;30V 2N-Channel Enhancement Mode MOSFET

          General Description The is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability ap

          文件:2.16288 Mbytes 頁數(shù):6 Pages

          EVVOSEMI

          翊歐

          IRF8313TR

          絲?。?strong>IRF8313;Package:SOP-8;30V 2N-Channel Enhancement Mode MOSFET

          General Description The is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability ap

          文件:2.08671 Mbytes 頁數(shù):6 Pages

          UMW

          友臺半導(dǎo)體

          IRF8313

          絲印:IRF8313;Package:SOP-8;30V 2N-Channel Enhancement Mode MOSFET

          General Description The is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability ap

          文件:2.08671 Mbytes 頁數(shù):6 Pages

          UMW

          友臺半導(dǎo)體

          IRF8313

          絲?。?strong>IRF8313;Package:SOP-8;30V 2N-Channel Enhancement Mode MOSFET

          General Description The is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability ap

          文件:2.16288 Mbytes 頁數(shù):6 Pages

          EVVOSEMI

          翊歐

          IRF8313TR

          絲?。?strong>IRF8313;Package:SOP-8;30V 2N-Channel Enhancement Mode MOSFET

          General Description The is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability ap

          文件:2.08671 Mbytes 頁數(shù):6 Pages

          UMW

          友臺半導(dǎo)體

          IRF8313PBF

          HEXFET Power MOSFET

          Description The IRF8313PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8313PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switc

          文件:260.41 Kbytes 頁數(shù):10 Pages

          IRF

          IRF8313TRPbF

          HEXFET Power MOSFET

          Description The IRF8313PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8313PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switc

          文件:260.41 Kbytes 頁數(shù):10 Pages

          IRF

          IRF8313PBF

          Fully Characterized Avalanche Voltage and Current

          文件:260.41 Kbytes 頁數(shù):10 Pages

          IRF

          IRF8313PBF_15

          Fully Characterized Avalanche Voltage and Current

          文件:260.41 Kbytes 頁數(shù):10 Pages

          IRF

          詳細(xì)參數(shù)

          • 型號:

            IRF8313

          • 功能描述:

            MOSFET MOSFT DUAL NCh 30V 9.7A

          • RoHS:

          • 制造商:

            STMicroelectronics

          • 晶體管極性:

            N-Channel

          • 汲極/源極擊穿電壓:

            650 V

          • 閘/源擊穿電壓:

            25 V

          • 漏極連續(xù)電流:

            130 A 電阻汲極/源極

          • RDS(導(dǎo)通):

            0.014 Ohms

          • 配置:

            Single

          • 安裝風(fēng)格:

            Through Hole

          • 封裝/箱體:

            Max247

          • 封裝:

            Tube

          供應(yīng)商型號品牌批號封裝庫存備注價格
          IR
          22+
          TO-220
          6000
          終端可免費供樣,支持BOM配單
          詢價
          IR
          23+
          SO-8
          8560
          受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
          詢價
          友臺
          23+
          SOP-8
          10700
          優(yōu)勢原裝現(xiàn)貨假一賠十
          詢價
          IR
          23+
          TO-220
          8000
          只做原裝現(xiàn)貨
          詢價
          IR
          23+
          TO-220
          7000
          詢價
          CJ/長電
          24+
          SOP-8
          8000
          只做原裝,歡迎詢價,量大價優(yōu)
          詢價
          友臺UMW
          25+
          DIP
          3000
          國產(chǎn)替換現(xiàn)貨降本
          詢價
          UMW(友臺半導(dǎo)體)
          24+
          SOP-8
          9000
          加QQ:78517935原裝正品有單必成
          詢價
          IR
          2016+
          SOP8
          6600
          只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
          詢價
          IOR
          25+
          SOP8
          17966
          百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
          詢價
          更多IRF8313供應(yīng)商 更新時間2026-1-18 14:00:00
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