| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRFL4105 | 絲?。?strong>IRFL4105；Package：SOT-223；60V N-Channel IRFL4105 General Description These logic level N-Channel enhancement This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are particula 文件：577.74 Kbytes 頁數(shù)：6 Pages | EVVOSEMI 翊歐 | EVVOSEMI | |
IRFL4105 | 絲?。?strong>IRFL4105；Package：SOT-223；60V N-Channel IRFL4105 General Description These logic level N-Channel enhancement This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are particula 文件：577.74 Kbytes 頁數(shù)：6 Pages | EVVOSEMI 翊歐 | EVVOSEMI | |
IRFL4105 | Ultra Low On-Resistance Description The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enla 文件：827.7 Kbytes 頁數(shù)：9 Pages | KERSEMI | KERSEMI | |
IRFL4105 | Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=3.7A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：168.77 Kbytes 頁數(shù)：9 Pages | IRF | IRF | |
HEXFET? Power MOSFET 文件：158.56 Kbytes 頁數(shù)：9 Pages | IRF | IRF | ||
HEXFET? Power MOSFET 文件：498.91 Kbytes 頁數(shù)：10 Pages | INFINEON 英飛凌 | INFINEON | ||
Advanced Process Technology 文件：163.88 Kbytes 頁數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Advanced Process Technology 文件：163.88 Kbytes 頁數(shù)：9 Pages | IRF | IRF | ||
Advanced Process Technology 文件：163.88 Kbytes 頁數(shù)：9 Pages | IRF | IRF | ||
Advanced Process Technology 文件：163.88 Kbytes 頁數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
詳細參數(shù)
- 型號：
IRFL4105
- 功能描述：
MOSFET N-CH 55V 3.7A SOT223
- RoHS：
否
- 類別：
分離式半導(dǎo)體產(chǎn)品 >> FET - 單
- 系列：
HEXFET®
- 標準包裝：
1,000
- 系列：
MESH OVERLAY™ FET
- 型：
MOSFET N 通道，金屬氧化物 FET
- 特點：
邏輯電平門
- 漏極至源極電壓(Vdss)：
200V 電流 - 連續(xù)漏極(Id) @ 25°
- C：
18A 開態(tài)Rds（最大）@ Id, Vgs @ 25°
- C：
180 毫歐 @ 9A，10V Id 時的
- Vgs(th)（最大）：
4V @ 250µA 閘電荷(Qg) @
- Vgs：
72nC @ 10V 輸入電容(Ciss) @
- Vds：
1560pF @ 25V 功率 -
- 最大：
40W
- 安裝類型：
通孔
- 封裝/外殼：
TO-220-3 整包
- 供應(yīng)商設(shè)備封裝：
TO-220FP
- 包裝：
管件
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
25+ |
SOT-223 |
20300 |
IR原裝特價IRFL4105即刻詢購立享優(yōu)惠#長期有貨 |
詢價 | ||
IR/VISHAY |
SOT223 |
30216 |
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S |
詢價 | |||
IR |
23+ |
SOT-223 |
4000 |
原廠原裝正品 |
詢價 | ||
IR |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
IR |
2450+ |
SOT-223 |
9850 |
只做原裝正品現(xiàn)貨或訂貨假一賠十! |
詢價 | ||
IR |
25+ |
SOT-223 |
3500 |
福安甌為您提供真芯庫存,真誠服務(wù) |
詢價 | ||
IOR |
05/06+ |
SOT223 |
336 |
全新原裝100真實現(xiàn)貨供應(yīng) |
詢價 | ||
IR |
17+ |
SOT-223 |
6200 |
詢價 | |||
IR |
24+ |
原廠封裝 |
5182 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IR |
24+ |
SOT-223 |
5825 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存! |
詢價 |
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