首頁(yè) >IRF7341IPBF>規(guī)格書(shū)列表
| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRF7341IPBF | HEXFET Power MOSFET 文件：138.32 Kbytes 頁(yè)數(shù)：7 Pages | IRF | IRF | |
IRF7341IPBF | HEXFET Power MOSFET | Infineon 英飛凌 | Infineon | |
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, 文件：158.59 Kbytes 頁(yè)數(shù)：7 Pages | IRF | IRF | ||
Generation V Technology 文件：163.97 Kbytes 頁(yè)數(shù)：7 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description Specifically designed for Automotive applications, these HEXFET ? Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET’s are a 17 文件：156.51 Kbytes 頁(yè)數(shù)：9 Pages | IRF | IRF |
詳細(xì)參數(shù)
- 型號(hào)：
IRF7341IPBF
- 功能描述：
MOSFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
8-SOIC |
380 |
詢價(jià) | |||
International Rectifier |
2022+ |
1 |
全新原裝 貨期兩周 |
詢價(jià) | |||
IR |
22+ |
SOP-8 |
8000 |
原裝正品支持實(shí)單 |
詢價(jià) | ||
IR |
22+ |
SOP8 |
6000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢價(jià) | ||
IR |
23+ |
SOP8 |
66550 |
##公司主營(yíng)品牌長(zhǎng)期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù) |
詢價(jià) | ||
IR |
23+ |
SOP8 |
8000 |
只做原裝現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
SOP8 |
7000 |
詢價(jià) | |||
IR |
25+ |
SOP-8 |
18000 |
原廠直接發(fā)貨進(jìn)口原裝 |
詢價(jià) | ||
IR |
23+ |
SOP8 |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
IR |
23+ |
SOP-8 |
4560 |
一級(jí)代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、 |
詢價(jià) |
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