絲印：IRF7401；Package：SOP-8；N-Channel MOSFET

Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free

Features VDS (V) = 20V RDS(ON) 22 m (VGS = 4.5V)

文件：408.75 Kbytes 頁數(shù)：8 Pages

UMW

友臺半導(dǎo)體

N-Channel MOSFET

Features Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free VDS (V) = 20V RDS(ON)

文件：402.95 Kbytes 頁數(shù)：8 Pages

EVVOSEMI

翊歐

Thermoelectric Cooler Controller

GENERAL DESCRIPTION The ADN8830 is a monolithic controller that drives a thermoelectric cooler (TEC) to stabilize the temperature of a laser diode or a passive component used in telecommunications equipment. This device relies on a negative temperature coefficient (NTC) thermistor to sense t

文件：416.88 Kbytes 頁數(shù)：24 Pages

AD

亞德諾

Thermoelectric Cooler Controller

GENERAL DESCRIPTION The ADN8830 is a monolithic controller that drives a thermoelectric cooler (TEC) to stabilize the temperature of a laser diode or a passive component used in telecommunications equipment. This device relies on a negative temperature coefficient (NTC) thermistor to sense t

文件：279.17 Kbytes 頁數(shù)：22 Pages

AD

亞德諾

Power MOSFET(Vdss=20V, Rds(on)=0.022ohm)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

文件：118.89 Kbytes 頁數(shù)：9 Pages

IRF

絲?。?strong>IRF7401；Package：SOP-8；N-Channel MOSFET

Features Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free VDS (V) = 20V RDS(ON)

文件：402.95 Kbytes 頁數(shù)：8 Pages

EVVOSEMI

翊歐

絲?。?strong>IRF7401；Package：SOP-8；N-Channel MOSFET

Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free

Features VDS (V) = 20V RDS(ON) 22 m (VGS = 4.5V)

文件：408.75 Kbytes 頁數(shù)：8 Pages

UMW

友臺半導(dǎo)體

20V 單個 N 通道 HEXFET Power MOSFET, 采用 SO-8 封裝

\n優(yōu)勢:\n? 符合 RoHS\n? 低 RDS(on)\n? 具有業(yè)內(nèi)先進(jìn)的品質(zhì)\n? 動態(tài)的dv/dt額定值\n? 快速開關(guān)\n? 完全雪崩額定值\n? 175°C 的工作溫度;

Infineon

英飛凌

HEXFET? Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：197.44 Kbytes 頁數(shù)：9 Pages

IRF

Generation V Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：202.97 Kbytes 頁數(shù)：9 Pages

IRF