High frequency DC-DC converters

Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters

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IRF

80V 雙 N 通道 HEXFET Power MOSFET, 采用 SO-8 封裝

\n優(yōu)勢:\n? 符合 RoHS\n? 經(jīng)過充分驗證的雪崩電壓和電流\n? 低柵漏電荷，可降低開關(guān)損耗\n? 經(jīng)過充分驗證的的電容，包括有效的Coss以簡化設(shè)計\n? 雙 N 通道 MOSFET;

Infineon

英飛凌

HEXFET?Power MOSFET

Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Lead-Free

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IRF

HEXFET?Power MOSFET

Description Additional features of These HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

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IRF

High frequency DC-DC converters

Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Lead-Free

文件：232.31 Kbytes 頁數(shù)：8 Pages

IRF

High frequency DC-DC converters Lead-Free

文件：229.04 Kbytes 頁數(shù)：8 Pages

IRF

High frequency DC-DC converters

文件：232.42 Kbytes 頁數(shù)：8 Pages

IRF

High frequency DC-DC converters Lead-Free

文件：229.04 Kbytes 頁數(shù)：8 Pages

IRF

High frequency DC-DC converters

文件：232.42 Kbytes 頁數(shù)：8 Pages

IRF

Industry-standard pinout SO-8 Package

文件：210.91 Kbytes 頁數(shù)：9 Pages

IRF