| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Advanced Process Technology Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surfac 文件：1.19709 Mbytes 頁數(shù)：11 Pages | KERSEMI | KERSEMI | ||
Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know 文件：8.24278 Mbytes 頁數(shù)：11 Pages | KERSEMI | KERSEMI | ||
HEXFET? Power MOSFET Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know 文件：300.8 Kbytes 頁數(shù)：12 Pages | IRF | IRF | ||
HEXFET? Power MOSFET Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know 文件：300.8 Kbytes 頁數(shù)：12 Pages | IRF | IRF | ||
Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know 文件：8.24278 Mbytes 頁數(shù)：11 Pages | KERSEMI | KERSEMI | ||
Advanced Process Technology Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surfac 文件：1.19709 Mbytes 頁數(shù)：11 Pages | KERSEMI | KERSEMI | ||
Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A) Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know 文件：155.4 Kbytes 頁數(shù)：11 Pages | IRF | IRF | ||
N-Channel Power MOSFETs 200V, 18A, 0.15ohm Features ? Ultra Low On-Resistance - rDS(ON) = 0.102? (Typ), VGS = 10V ? Simulation Models - Temperature Compensated PSPICE? and SABER? Electrical Models - Spice and SABER? Thermal Impedance Models ? Peak Current vs Pulse Width Curve ? UIS Rateing Curve 文件：160.31 Kbytes 頁數(shù)：11 Pages | FAIRCHILD 仙童半導體 | FAIRCHILD | ||
HEXFET? Power MOSFET Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know 文件：300.8 Kbytes 頁數(shù)：12 Pages | IRF | IRF | ||
Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know 文件：8.24278 Mbytes 頁數(shù)：11 Pages | KERSEMI | KERSEMI |
技術(shù)參數(shù)
- OPN：
IRF640NPBF
- Qualification：
Non-Automotive
- Package name：
TO220
- VDS max：
200 V
- RDS (on) @10V max：
150 m?
- ID @25°C max：
18 A
- QG typ @10V：
44.7 nC
- Polarity：
N
- VGS(th) min：
2 V
- VGS(th) max：
4 V
- VGS(th)：
3 V
- Technology：
IR MOSFET?
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
TO-220 |
3500 |
全新原裝,公司現(xiàn)貨銷售 |
詢價 | ||
IR |
13+ |
TO-220/TO-263 |
10000 |
深圳市勤思達科技有限公司主營IR系列,現(xiàn)貨供應IRF640N,全新原裝,正品供應。 |
詢價 | ||
IR |
24+ |
TO-220 |
50000 |
深圳市弘為電子有限公司,是原裝現(xiàn)貨庫存為主的混合型供應商,專注功率器件。
代理和分銷:Infineon(英飛凌)+IR(國際整流器)、Yea Shin(臺灣亞昕)、Mosway(科域)
應用領(lǐng)域:電源、電機控制與驅(qū)動、家電、電池管理、電動交通、汽車電子、工業(yè)控制、電焊機、節(jié)能照明 |
詢價 | ||
IR |
新 |
進口原裝 |
3000 |
庫存現(xiàn)貨 |
詢價 | ||
IR |
25+ |
TO-220 |
4500 |
原裝正品!現(xiàn)貨熱賣! |
詢價 | ||
INFINEON/英飛凌 |
25+ |
TO-220 |
32000 |
INFINEON/英飛凌全新特價IRF640N即刻詢購立享優(yōu)惠#長期有貨 |
詢價 | ||
FSC/IR |
24+ |
TO-220 |
11000 |
絕對原裝現(xiàn)貨,價格低,歡迎詢購! |
詢價 | ||
H |
24+ |
TO 220 |
157566 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
IR |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
IR |
24+ |
TO-220 |
48650 |
原裝正品 特價現(xiàn)貨(香港 新加坡 日本) |
詢價 |
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