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首頁(yè) >IRF634>規(guī)格書列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
IRF634NLPBF	文件：162.91 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer 文件：162.91 Kbytes 頁(yè)數(shù)：8 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
IRF634NLPBF	文件：222.71 Kbytes Page：11 Pages	HEXFET Power MOSFET Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well kn 文件：222.71 Kbytes 頁(yè)數(shù)：11 Pages	IRF	IRF
IRF634NPBF	文件：222.71 Kbytes Page：11 Pages	HEXFET Power MOSFET Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well kn 文件：222.71 Kbytes 頁(yè)數(shù)：11 Pages	IRF	IRF
IRF634NPBF	文件：162.91 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer 文件：162.91 Kbytes 頁(yè)數(shù)：8 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
IRF634NS	文件：301.06 Kbytes Page：11 Pages	Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A) Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well kn 文件：301.06 Kbytes 頁(yè)數(shù)：11 Pages	IRF	IRF
IRF634NS	文件：162.91 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer 文件：162.91 Kbytes 頁(yè)數(shù)：8 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
IRF634NSPBF	文件：222.71 Kbytes Page：11 Pages	HEXFET Power MOSFET Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well kn 文件：222.71 Kbytes 頁(yè)數(shù)：11 Pages	IRF	IRF
IRF634NSPBF	文件：162.91 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer 文件：162.91 Kbytes 頁(yè)數(shù)：8 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
IRF634NSTRL	文件：162.91 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer 文件：162.91 Kbytes 頁(yè)數(shù)：8 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
IRF634NSTRLPBF	文件：162.91 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer 文件：162.91 Kbytes 頁(yè)數(shù)：8 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY

技術(shù)參數(shù)

Ptot(W)：
74
ID(A)：
8.1
BVDSS(V)：
250
Package：
TO-220

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市創(chuàng)新跡電子有限公司	IRF634	IR	2021+	TO-220	9000	原裝現(xiàn)貨,隨時(shí)歡迎詢價(jià)	詢價(jià)
柒號(hào)芯城電子商務(wù)(深圳)有限公司	IRF634	IR	2024+	N/A	70000	柒號(hào)只做原裝現(xiàn)貨價(jià)秒殺全網(wǎng)	詢價(jià)
深圳市科恒偉業(yè)電子有限公司	IRF634	IR	2450+	TO-220	9850	只做原裝正品現(xiàn)貨或訂貨假一賠十!	詢價(jià)
深圳市高捷芯城科技有限公司	IRF634	STMicroelectronics	25+	N/A	18798	正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊	詢價(jià)
深圳市一線半導(dǎo)體有限公司	IRF634	FAIRCHILD	24+	TO-220	3800		詢價(jià)
芯有半導(dǎo)體（深圳）有限公司	IRF634	IR	05+	TO-220	5000	自己公司全新庫(kù)存絕對(duì)有貨	詢價(jià)
深圳市勤思達(dá)科技有限公司	IRF634	IR	15+	TO-220	11560	全新原裝,現(xiàn)貨庫(kù)存,長(zhǎng)期供應(yīng)	詢價(jià)
深圳市卓越微芯電子有限公司	IRF634	IR	25+	TO-220	2700	百分百原裝正品真實(shí)公司現(xiàn)貨庫(kù)存本公司只做原裝可	詢價(jià)
深圳市福田區(qū)綠盛電子商行	IRF634	FSC	2015+	TO-220	19889	一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣!	詢價(jià)
深圳市宇集芯電子有限公司	IRF634	IR	25+	TO-220	90000	一級(jí)代理商進(jìn)口原裝現(xiàn)貨、價(jià)格合理	詢價(jià)

更多IRF634供應(yīng)商更新時(shí)間2026-1-21 14:00:00

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