<strong id="5lvfi"><dl id="5lvfi"></dl></strong>

      • <tfoot id="5lvfi"><menuitem id="5lvfi"></menuitem></tfoot>
        <th id="5lvfi"><progress id="5lvfi"></progress></th>
          <strong id="5lvfi"><form id="5lvfi"></form></strong>
          <strong id="5lvfi"><form id="5lvfi"></form></strong>
        1. <del id="5lvfi"></del>

          首頁 >IRF634>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IRF634

          Power MOSFET

          Vishay

          威世

          IRF634

          Power MOSFET(Vdss=250V, Rds(on)=0.45ohm, Id=8.1A)

          Infineon

          英飛凌

          IRF634A

          Advanced Power MOSFET

          FEATURES ? Avalanche Rugged Technology ? Rugged Gate Oxide Technology ? Lower Input Capacitance ? Improved Gate Charge ? Extended Safe Operating Area ? Lower Leakage Current: 10μA (Max.) @ VDS= 250V ? Lower RDS(ON): 0.327?(Typ.)

          文件:224.02 Kbytes 頁數(shù):7 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          IRF634B

          250V N-Channel MOSFET

          General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

          文件:859.54 Kbytes 頁數(shù):10 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          IRF634B

          250V N-Channel MOSFET

          General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

          文件:896.45 Kbytes 頁數(shù):9 Pages

          KERSEMI

          IRF634FP

          N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY??MOSFET

          Description Using the latest high voltage MESH OVERLAY? process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for li

          文件:333.68 Kbytes 頁數(shù):9 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          IRF634N

          Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A)

          Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well kn

          文件:301.06 Kbytes 頁數(shù):11 Pages

          IRF

          IRF634N

          Power MOSFET

          DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer

          文件:162.91 Kbytes 頁數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRF634NL

          Power MOSFET

          DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer

          文件:162.91 Kbytes 頁數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRF634NL

          Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A)

          Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well kn

          文件:301.06 Kbytes 頁數(shù):11 Pages

          IRF

          技術(shù)參數(shù)

          • Ptot(W):

            74

          • ID(A):

            8.1

          • BVDSS(V):

            250

          • Package:

            TO-220

          供應(yīng)商型號品牌批號封裝庫存備注價格
          IR
          2021+
          TO-220
          9000
          原裝現(xiàn)貨,隨時歡迎詢價
          詢價
          IR
          2024+
          N/A
          70000
          柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
          詢價
          IR
          2450+
          TO-220
          9850
          只做原裝正品現(xiàn)貨或訂貨假一賠十!
          詢價
          STMicroelectronics
          25+
          N/A
          18798
          正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊
          詢價
          FAIRCHILD
          24+
          TO-220
          3800
          詢價
          IR
          05+
          TO-220
          5000
          自己公司全新庫存絕對有貨
          詢價
          IR
          15+
          TO-220
          11560
          全新原裝,現(xiàn)貨庫存,長期供應(yīng)
          詢價
          IR
          25+
          TO-220
          2700
          百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
          詢價
          FSC
          2015+
          TO-220
          19889
          一級代理原裝現(xiàn)貨,特價熱賣!
          詢價
          IR
          25+
          TO-220
          90000
          一級代理商進(jìn)口原裝現(xiàn)貨、價格合理
          詢價
          更多IRF634供應(yīng)商 更新時間2026-1-20 14:00:00
            <strong id="5lvfi"><dl id="5lvfi"></dl></strong>

              • <tfoot id="5lvfi"><menuitem id="5lvfi"></menuitem></tfoot>
                <th id="5lvfi"><progress id="5lvfi"></progress></th>
                  <strong id="5lvfi"><form id="5lvfi"></form></strong>
                  <strong id="5lvfi"><form id="5lvfi"></form></strong>
                1. <del id="5lvfi"></del>
                  日韩资源一区 | 亚洲AV无码久久蜜桃杨思敏 | 欧美在线v | 亚洲无码在线播放视频 | a√在线播放 |