| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRF532 | N-Channel Power MOSFETs, 20 A, 60-100 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power, supplies, UPS, AC and DC motor control, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VGS Rated at ±20 V ● 文件:180.59 Kbytes 頁(yè)數(shù):6 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | |
IRF532 | N-CHANNEL POWER MOSFETS
文件:354.18 Kbytes 頁(yè)數(shù):6 Pages | SAMSUNG 三星 | SAMSUNG | |
IRF532 | N-Channel Power MOSFETs Avalanche Energy Rated
文件:390.01 Kbytes 頁(yè)數(shù):5 Pages | HARRIS | HARRIS | |
IRF532 | N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
文件:157.16 Kbytes 頁(yè)數(shù):2 Pages | MOTOROLA 摩托羅拉 | MOTOROLA | |
IRF532 | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS N - channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast switching times make these POWER MOS transistors ideal for high speed switching applications. Applications include DC/DC converters, UPS battery chargers, s 文件:47.74 Kbytes 頁(yè)數(shù):3 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | |
IRF532 | N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS 文件:187.75 Kbytes 頁(yè)數(shù):3 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | |
IRF532 | isc N-Channel Mosfet Transistor 文件:45.27 Kbytes 頁(yè)數(shù):2 Pages | ISC 無(wú)錫固電 | ISC | |
IRF532 | Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220 | NJS | NJS | |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS N - channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast switching times make these POWER MOS transistors ideal for high speed switching applications. Applications include DC/DC converters, UPS battery chargers, s 文件:47.74 Kbytes 頁(yè)數(shù):3 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-Channel Power MOSFETs Avalanche Energy Rated
文件:390.01 Kbytes 頁(yè)數(shù):5 Pages | HARRIS | HARRIS |
技術(shù)參數(shù)
- Minimum Operating Temperature:
-55°C
- Maximum Power Dissipation:
79000mW
- Maximum Operating Temperature:
150°C
- Maximum Gate Source Voltage:
±20V
- Maximum Drain Source Voltage:
100V
- Maximum Continuous Drain Current:
12A
- Configuration:
Single
- Channel Type:
N
- Channel Mode:
Enhancement
- Category:
Power MOSFET
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
SAMSUNG |
24+/25+ |
650 |
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu) |
詢價(jià) | |||
HARRIS |
17+ |
TO-220 |
6200 |
詢價(jià) | |||
MOT |
23+ |
QFP |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
SAMSUNG |
06+ |
原廠原裝 |
4684 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢價(jià) | ||
HARRIS |
新 |
6 |
全新原裝 貨期兩周 |
詢價(jià) | |||
HARRIS |
23+ |
TO-220 |
10000 |
專做原裝正品,假一罰百! |
詢價(jià) | ||
HAR |
2447 |
TO-220 |
100500 |
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨 |
詢價(jià) | ||
IR |
23+ |
TO-220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
三星 |
23+ |
TO-220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
IR |
25+ |
TO220 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) |
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