| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRF5210 | Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi 文件:125.28 Kbytes 頁數(shù):8 Pages | IRF | IRF | |
IRF5210 | P-Channel MOSFET Transistor 文件:334.13 Kbytes 頁數(shù):2 Pages | ISC 無錫固電 | ISC | |
IRF5210 | Advanced Process Technology 文件:738.7 Kbytes 頁數(shù):8 Pages | KERSEMI | KERSEMI | |
IRF5210 | -100V 單個 P 通道 HEXFET Power MOSFET, 采用 TO-220AB 封裝 \n優(yōu)勢:\n? 符合 RoHS\n? 低 RDS(on)\n? 具有業(yè)內(nèi)先進(jìn)的品質(zhì)\n? 動態(tài)的dv/dt額定值\n? 快速開關(guān)\n? 完全雪崩額定值\n? 175°C 的工作溫度\n? P 通道MOSFET; | Infineon 英飛凌 | Infineon | |
Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件:186.9 Kbytes 頁數(shù):10 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. ● Advanced Proces 文件:696.34 Kbytes 頁數(shù):10 Pages | IRF | IRF | ||
Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi 文件:125.28 Kbytes 頁數(shù):8 Pages | IRF | IRF | ||
Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件:186.9 Kbytes 頁數(shù):10 Pages | IRF | IRF | ||
P-Ch 100V Fast Switching MOSFETs 100 EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology 文件:998.16 Kbytes 頁數(shù):4 Pages | EVVOSEMI 翊歐 | EVVOSEMI | ||
HEXFET Power MOSFET Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. ● Advanced Proces 文件:696.34 Kbytes 頁數(shù):10 Pages | IRF | IRF |
技術(shù)參數(shù)
- OPN:
IRF5210PBF
- Qualification:
Non-Automotive
- Package name:
TO220
- VDS max:
-100 V
- RDS (on) @10V max:
60 m?
- ID @25°C max:
-40 A
- QG typ @10V:
120 nC
- Polarity:
P
- VGS(th) min:
-2 V
- VGS(th) max:
-4 V
- VGS(th):
-3 V
- Technology:
IR MOSFET?
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飛凌 |
25+ |
TO220 |
20300 |
INFINEON/英飛凌原裝特價IRF5210即刻詢購立享優(yōu)惠#長期有貨 |
詢價 | ||
IR |
23+ |
TO-220 |
3355 |
原廠原裝正品 |
詢價 | ||
IR |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
IR |
24+ |
TO-220 |
48650 |
原裝正品 特價現(xiàn)貨(香港 新加坡 日本) |
詢價 | ||
IR |
2450+ |
TO-220 |
9850 |
只做原裝正品現(xiàn)貨或訂貨假一賠十! |
詢價 | ||
IR |
24+ |
TO-220 |
6000 |
全新原裝正品,歡迎咨詢! |
詢價 | ||
IR |
06+ |
TO-220 |
1000 |
原裝庫存 |
詢價 | ||
IR |
2015+ |
TO-220 |
19889 |
一級代理原裝現(xiàn)貨,特價熱賣! |
詢價 | ||
IR |
24+ |
TO-220 |
10 |
詢價 | |||
IR |
23+ |
TO-220 |
20000 |
原裝正品,假一罰十 |
詢價 |
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