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          首頁 >IRF5210>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IRF5210

          Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)

          Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

          文件:125.28 Kbytes 頁數(shù):8 Pages

          IRF

          IRF5210

          P-Channel MOSFET Transistor

          文件:334.13 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          IRF5210

          Advanced Process Technology

          文件:738.7 Kbytes 頁數(shù):8 Pages

          KERSEMI

          IRF5210

          -100V 單個 P 通道 HEXFET Power MOSFET, 采用 TO-220AB 封裝

          \n優(yōu)勢:\n? 符合 RoHS\n? 低 RDS(on)\n? 具有業(yè)內(nèi)先進(jìn)的品質(zhì)\n? 動態(tài)的dv/dt額定值\n? 快速開關(guān)\n? 完全雪崩額定值\n? 175°C 的工作溫度\n? P 通道MOSFET;

          Infineon

          英飛凌

          IRF5210L

          Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)

          Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

          文件:186.9 Kbytes 頁數(shù):10 Pages

          IRF

          IRF5210LPBF

          HEXFET Power MOSFET

          Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. ● Advanced Proces

          文件:696.34 Kbytes 頁數(shù):10 Pages

          IRF

          IRF5210PBF.

          Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)

          Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

          文件:125.28 Kbytes 頁數(shù):8 Pages

          IRF

          IRF5210S

          Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)

          Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

          文件:186.9 Kbytes 頁數(shù):10 Pages

          IRF

          IRF5210S

          P-Ch 100V Fast Switching MOSFETs

          100 EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology

          文件:998.16 Kbytes 頁數(shù):4 Pages

          EVVOSEMI

          翊歐

          IRF5210SPBF

          HEXFET Power MOSFET

          Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. ● Advanced Proces

          文件:696.34 Kbytes 頁數(shù):10 Pages

          IRF

          技術(shù)參數(shù)

          • OPN:

            IRF5210PBF

          • Qualification:

            Non-Automotive

          • Package name:

            TO220

          • VDS max:

            -100 V

          • RDS (on) @10V max:

            60 m?

          • ID @25°C max:

            -40 A

          • QG typ @10V:

            120 nC

          • Polarity:

            P

          • VGS(th) min:

            -2 V

          • VGS(th) max:

            -4 V

          • VGS(th):

            -3 V

          • Technology:

            IR MOSFET?

          供應(yīng)商型號品牌批號封裝庫存備注價格
          INFINEON/英飛凌
          25+
          TO220
          20300
          INFINEON/英飛凌原裝特價IRF5210即刻詢購立享優(yōu)惠#長期有貨
          詢價
          IR
          23+
          TO-220
          3355
          原廠原裝正品
          詢價
          IR
          2024+
          N/A
          70000
          柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
          詢價
          IR
          24+
          TO-220
          48650
          原裝正品 特價現(xiàn)貨(香港 新加坡 日本)
          詢價
          IR
          2450+
          TO-220
          9850
          只做原裝正品現(xiàn)貨或訂貨假一賠十!
          詢價
          IR
          24+
          TO-220
          6000
          全新原裝正品,歡迎咨詢!
          詢價
          IR
          06+
          TO-220
          1000
          原裝庫存
          詢價
          IR
          2015+
          TO-220
          19889
          一級代理原裝現(xiàn)貨,特價熱賣!
          詢價
          IR
          24+
          TO-220
          10
          詢價
          IR
          23+
          TO-220
          20000
          原裝正品,假一罰十
          詢價
          更多IRF5210供應(yīng)商 更新時間2026-1-20 20:45:00
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