Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, pr

文件：124.32 Kbytes 頁數(shù)：8 Pages

IRF

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

文件：3.15583 Mbytes 頁數(shù)：8 Pages

KERSEMI

-55V P-Channel MOSFET

Features VDS (V) =-55V ID = -31A (VGS = -10V) RDS(ON)

文件：3.58041 Mbytes 頁數(shù)：8 Pages

EVVOSEMI

翊歐

P-Channel MOSFET Transistor

文件：334.6 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

絲?。?strong>IRF5305；Package：TO-220；-60V P-Channel MOSFET

Features * VDS (V) = -60V * ID = -31A (VGS = -10V) * RDS(ON)

文件：723.45 Kbytes 頁數(shù)：8 Pages

UMW

友臺半導(dǎo)體

-55V 單個 P 通道 HEXFET Power MOSFET, 采用 TO-220AB 封裝

\n優(yōu)勢:\n? 符合 RoHS\n? 低 RDS(on)\n? 具有業(yè)內(nèi)先進的品質(zhì)\n? 動態(tài)的dv/dt額定值\n? 快速開關(guān)\n? 完全雪崩額定值\n? 175°C 的工作溫度\n? P 通道MOSFET;

Infineon

英飛凌

Advanced Process Technology

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inte

文件：1.22797 Mbytes 頁數(shù)：10 Pages

KERSEMI

Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

文件：171.24 Kbytes 頁數(shù)：10 Pages

IRF

HEXFET Power MOSFET

文件：697.05 Kbytes 頁數(shù)：10 Pages

IRF

Advanced Process Technology

文件：4.33232 Mbytes 頁數(shù)：10 Pages

KERSEMI