| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
AUTOMOTIVE MOSFET (75V, 94mOHM, 75A) Description This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb 文件：279.79 Kbytes 頁數(shù)：12 Pages | IRF | IRF | ||
Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：272.67 Kbytes 頁數(shù)：12 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：4.64052 Mbytes 頁數(shù)：12 Pages | KERSEMI | KERSEMI | ||
AUTOMOTIVE MOSFET (75V, 94mOHM, 75A) Description This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb 文件：279.79 Kbytes 頁數(shù)：12 Pages | IRF | IRF | ||
Isc N-Channel MOSFET Transistor 文件：300.39 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
Advanced Process Technology 文件：133.54 Kbytes 頁數(shù)：11 Pages | IRF | IRF | ||
Advanced Process Technology 文件：192.22 Kbytes 頁數(shù)：8 Pages | IRF | IRF | ||
Advanced Process Technology 文件：3.08673 Mbytes 頁數(shù)：8 Pages | KERSEMI | KERSEMI | ||
Advanced Process Technology 文件：239.57 Kbytes 頁數(shù)：8 Pages | IRF | IRF | ||
絲?。?a target="_blank" title="Marking" href="/d2pak/marking.html">D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor 文件：189.1 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC |
技術(shù)參數(shù)
- OPN：
IRF2807PBF
- Qualification：
Non-Automotive
- Package name：
TO220
- VDS max：
75 V
- RDS (on) @10V max：
13 m?
- ID @25°C max：
82 A
- QG typ @10V：
106.7 nC
- Polarity：
N
- VGS(th) min：
2 V
- VGS(th) max：
4 V
- VGS(th)：
3 V
- Technology：
IR MOSFET?
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
13+ |
TO-220/TO-263 |
10000 |
深圳市勤思達(dá)科技有限公司主營IR系列,現(xiàn)貨供應(yīng)IRF2807,全新原裝,正品供應(yīng)。 |
詢價(jià) | ||
INFINEON/英飛凌 |
25+ |
TO-220 |
20300 |
INFINEON/英飛凌原裝特價(jià)IRF2807即刻詢購立享優(yōu)惠#長期有貨 |
詢價(jià) | ||
IR |
23+ |
TO220AB |
56000 |
詢價(jià) | |||
IR |
24+ |
TO 220 |
161152 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
IR |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng) |
詢價(jià) | ||
IR |
24+ |
TO-220 |
48650 |
原裝正品 特價(jià)現(xiàn)貨(香港 新加坡 日本) |
詢價(jià) | ||
IR |
2012 |
TO-220 |
5 |
全新原裝正品現(xiàn)貨 |
詢價(jià) | ||
IR |
1200 |
盈芯辭舊，利信E界，進(jìn)口原裝現(xiàn)貨，質(zhì)量保證。
|
詢價(jià) | ||||
IR |
2015+ |
SOP/DIP |
19889 |
一級代理原裝現(xiàn)貨,特價(jià)熱賣! |
詢價(jià) | ||
IR |
06+ |
TO-220 |
8000 |
自己公司全新庫存絕對有貨 |
詢價(jià) |
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