| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
HEXFET Power MOSFET Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p 文件：134.58 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p 文件：269.4 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
Advanced Process Technology Description Advanced MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the de 文件：1.07275 Mbytes 頁數(shù)：10 Pages | KERSEMI | KERSEMI | ||
Advanced Process Technology Ultra Low On-Resistance Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p 文件：4.24691 Mbytes 頁數(shù)：10 Pages | KERSEMI | KERSEMI | ||
HEXFET Power MOSFET Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p 文件：269.4 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：4.64052 Mbytes 頁數(shù)：12 Pages | KERSEMI | KERSEMI | ||
Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：272.67 Kbytes 頁數(shù)：12 Pages | IRF | IRF | ||
Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：272.67 Kbytes 頁數(shù)：12 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：4.64052 Mbytes 頁數(shù)：12 Pages | KERSEMI | KERSEMI | ||
AUTOMOTIVE MOSFET (75V, 94mOHM, 75A) Description This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb 文件：279.79 Kbytes 頁數(shù)：12 Pages | IRF | IRF |
技術(shù)參數(shù)
- OPN：
IRF2807PBF
- Qualification：
Non-Automotive
- Package name：
TO220
- VDS max：
75 V
- RDS (on) @10V max：
13 m?
- ID @25°C max：
82 A
- QG typ @10V：
106.7 nC
- Polarity：
N
- VGS(th) min：
2 V
- VGS(th) max：
4 V
- VGS(th)：
3 V
- Technology：
IR MOSFET?
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
13+ |
TO-220/TO-263 |
10000 |
深圳市勤思達科技有限公司主營IR系列,現(xiàn)貨供應(yīng)IRF2807,全新原裝,正品供應(yīng)。 |
詢價 | ||
INFINEON/英飛凌 |
25+ |
TO-220 |
20300 |
INFINEON/英飛凌原裝特價IRF2807即刻詢購立享優(yōu)惠#長期有貨 |
詢價 | ||
IR |
23+ |
TO220AB |
56000 |
詢價 | |||
IR |
24+ |
TO 220 |
161152 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
IR |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
IR |
24+ |
TO-220 |
48650 |
原裝正品 特價現(xiàn)貨(香港 新加坡 日本) |
詢價 | ||
IR |
2012 |
TO-220 |
5 |
全新原裝正品現(xiàn)貨 |
詢價 | ||
IR |
1200 |
盈芯辭舊，利信E界，進口原裝現(xiàn)貨，質(zhì)量保證。
|
詢價 | ||||
IR |
2015+ |
SOP/DIP |
19889 |
一級代理原裝現(xiàn)貨,特價熱賣! |
詢價 | ||
IR |
06+ |
TO-220 |
8000 |
自己公司全新庫存絕對有貨 |
詢價 |
相關(guān)規(guī)格書
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