| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRF2807S | HEXFET Power MOSFET Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p 文件：134.58 Kbytes 頁數(shù)：10 Pages | IRF | IRF | |
IRF2807S | HEXFET Power MOSFET Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p 文件：269.4 Kbytes 頁數(shù)：10 Pages | IRF | IRF | |
IRF2807S | Advanced Process Technology Description Advanced MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the de 文件：1.07275 Mbytes 頁數(shù)：10 Pages | KERSEMI | KERSEMI | |
IRF2807S | 絲?。?a target="_blank" title="Marking" href="/d2pak/marking.html">D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor 文件：189.1 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | |
IRF2807S | Advanced Process Technology 文件：133.54 Kbytes 頁數(shù)：11 Pages | IRF | IRF | |
HEXFET Power MOSFET Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p 文件：269.4 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
Advanced Process Technology Ultra Low On-Resistance Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p 文件：4.24691 Mbytes 頁數(shù)：10 Pages | KERSEMI | KERSEMI | ||
Advanced Process Technology 文件：278.55 Kbytes 頁數(shù)：11 Pages | IRF | IRF | ||
Advanced Process Technology 文件：133.54 Kbytes 頁數(shù)：11 Pages | IRF | IRF | ||
IRF2807S | 采用 D2-Pak 封裝的 75V 單 N 溝道功率 MOSFET \n優(yōu)勢:\n? RoHS Compliant\n? Low RDS(on)\n? Industry-leading quality\n? Dynamic dv/dt Rating\n? Fast Switching\n? Fully Avalanche Rated\n? 175°C Operating Temperature; | Infineon 英飛凌 | Infineon |
技術(shù)參數(shù)
- OPN：
IRF2807STRLPBF
- Qualification：
Non-Automotive
- Package name：
D2PAK
- VDS max：
75 V
- RDS (on) @10V max：
13 m?
- ID @25°C max：
82 A
- QG typ @10V：
106.7 nC
- Polarity：
N
- VGS(th) min：
2 V
- VGS(th) max：
4 V
- VGS(th)：
3 V
- Technology：
IR MOSFET?
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
最新 |
1000 |
原裝正品現(xiàn)貨 |
詢價 | |||
IR |
24+ |
TO-263 |
9750 |
絕對原裝現(xiàn)貨,價格低,歡迎詢購! |
詢價 | ||
IR |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
IR |
24+ |
TO-263 |
48650 |
原裝正品 特價現(xiàn)貨(香港 新加坡 日本) |
詢價 | ||
IR |
23+ |
TO-263 |
2500 |
絕對全新原裝!優(yōu)勢供貨渠道!特價!請放心訂購! |
詢價 | ||
IR |
2015+ |
D2-Pak |
19889 |
一級代理原裝現(xiàn)貨,特價熱賣! |
詢價 | ||
IR |
06+ |
TO-263 |
5000 |
自己公司全新庫存絕對有貨 |
詢價 | ||
IR |
2016+ |
TO-263 |
6000 |
公司只做原裝,假一罰十,可開17%增值稅發(fā)票! |
詢價 | ||
IR |
24+ |
原廠封裝 |
5000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IR |
24+/25+ |
1050 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 |
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