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          首頁(yè) >IRF220>規(guī)格書列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          IRF220-223

          N-Channel Power MOSFETs, 7A, 150-200V

          N-Channel Power MOSFETs 7A 150-200V

          文件:165.53 Kbytes 頁(yè)數(shù):5 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          IRF2204

          AUTOMOTIVE MOSFET

          Description Specifically designed for Automotive applications, this HEXFET?Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and imp

          文件:141.6 Kbytes 頁(yè)數(shù):9 Pages

          IRF

          IRF2204

          N-Channel MOSFET Transistor

          ? DESCRITION ? reliable device for use in a wide variety of applications ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤3.6m? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

          文件:338.51 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          IRF2204L

          AUTOMOTIVE MOSFET

          Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features to this design are a 175°C junction operating temperature, fast switching speed and im

          文件:224.58 Kbytes 頁(yè)數(shù):11 Pages

          IRF

          IRF2204LPBF

          HEXFET? Power MOSFET ( VDSS = 40V , RDS(on) = 3.6m廓 , ID = 170A )

          Description This HEXFET? Power MOSFET utilizes the lastest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features

          文件:256.45 Kbytes 頁(yè)數(shù):12 Pages

          IRF

          IRF2204S

          絲印:D2PAK;Package:TO-263;isc N-Channel MOSFET Transistor

          ? FEATURES ? With TO-263( D2PAK ) packaging ? High speed switching ? Low gate input resistance ? Standard level gate drive ? Easy to use ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Power supply ? Switching a

          文件:263.11 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          IRF2204S

          AUTOMOTIVE MOSFET

          Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features to this design are a 175°C junction operating temperature, fast switching speed and im

          文件:224.58 Kbytes 頁(yè)數(shù):11 Pages

          IRF

          IRF2204SPBF

          HEXFET? Power MOSFET ( VDSS = 40V , RDS(on) = 3.6m廓 , ID = 170A )

          Description This HEXFET? Power MOSFET utilizes the lastest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features

          文件:256.45 Kbytes 頁(yè)數(shù):12 Pages

          IRF

          IRF2204PBF

          Advanced Process Technology

          文件:263.64 Kbytes 頁(yè)數(shù):9 Pages

          IRF

          IRF2204PBF

          HEXFET? Power MOSFET

          文件:263.64 Kbytes 頁(yè)數(shù):9 Pages

          IRF

          技術(shù)參數(shù)

          • OPN:

            IRF2204PBF

          • Qualification:

            Non-Automotive

          • Package name:

            TO220

          • VDS max:

            40 V

          • RDS (on) @10V max:

            3.6 m?

          • ID @25°C max:

            210 A

          • QG typ @10V:

            130 nC

          • Polarity:

            N

          • VGS(th) min:

            2 V

          • VGS(th) max:

            4 V

          • VGS(th):

            3 V

          • Technology:

            IR MOSFET?

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          IR
          11+
          120000
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          IR
          25+
          QFN
          18000
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          IR
          24+
          TO-3
          10000
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          IR/MOT
          24+
          TO-3
          1500
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          2015+
          TO-3(鐵帽)
          19889
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          IR
          23+
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          5000
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          siliconix
          23+
          NA
          1182
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          IR
          18+
          TO-3
          85600
          保證進(jìn)口原裝可開(kāi)17%增值稅發(fā)票
          詢價(jià)
          IR/MOT
          專業(yè)鐵帽
          TO-3
          1500
          原裝鐵帽專營(yíng),代理渠道量大可訂貨
          詢價(jià)
          IR/MOT
          專業(yè)鐵帽
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          67500
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          更多IRF220供應(yīng)商 更新時(shí)間2012-6-19 8:31:00
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