| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRF150 | HiRel MOSFETs \n優(yōu)勢:; | Infineon 英飛凌 | Infineon | |
IRF150 | N-Channel Power MOSFETs/ 40 A/ 60 V/100 V | ONSEMI 安森美半導(dǎo)體 | ONSEMI | |
N-Channel Power MOSFETs, 40 A, 60 V/100 V N-Channel Power MOSFET 40A, 60 V/100 V 文件:125.37 Kbytes 頁數(shù):4 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this design of HEXFET? Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, 文件:552.76 Kbytes 頁數(shù):9 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET? Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temp 文件:659.63 Kbytes 頁數(shù):11 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description This Stripe Planar design of HEXFET? Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetiti 文件:253.75 Kbytes 頁數(shù):11 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this design of HEXFET? Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fas 文件:164.88 Kbytes 頁數(shù):9 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET? Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temp 文件:659.63 Kbytes 頁數(shù):11 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description This Stripe Planar design of HEXFET? Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetiti 文件:253.75 Kbytes 頁數(shù):11 Pages | IRF | IRF | ||
絲印:M115;Package:MG-WDSON-5;MOSFET OptiMOS?5, 150 V Features Lead free, ultra thin double sided cooling package Excellent gate charge x Ros(on) product (FOM) Very low on -resistance Ros(on) N-channel normal level 100 avalanche tested 文件:1.74566 Mbytes 頁數(shù):14 Pages | INFINEON 英飛凌 | INFINEON |
技術(shù)參數(shù)
- Package?:
TO-220
- VDS?max:
30.0V
- RDS (on)(@10V)?max:
3.3m?
- RDS (on)?max:
3.3m?
- Polarity?:
N
- ID (@ TC=100°C)?max:
170.0A
- ID ?max:
170.0A
- ID (@ TC=25°C)?max:
240.0A
- Ptot?max:
330.0W
- QG?:
130.0nC?
- Mounting?:
THT
- RthJC?max:
0.45K/W
- Qgd?:
41.0nC?
- Tj?max:
175.0°C
- VGS?max:
20.0V
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO 3 |
161420 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
HAR |
05+ |
原廠原裝 |
4287 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢價 | ||
IR |
24+ |
TO-3 |
100 |
詢價 | |||
STMICRO |
24+/25+ |
11 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | |||
IR |
24+ |
原廠封裝 |
2000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IOR |
1430+ |
TO3P |
5800 |
全新原裝,公司大量現(xiàn)貨供應(yīng),絕對正品 |
詢價 | ||
IR |
25+ |
TO-3 |
200 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
IR |
25+ |
鐵帽 |
18000 |
原廠直接發(fā)貨進(jìn)口原裝 |
詢價 | ||
MOT |
23+ |
鐵劑 |
5000 |
原裝正品,假一罰十 |
詢價 | ||
IR |
2015+ |
TO-3(鐵帽) |
19889 |
一級代理原裝現(xiàn)貨,特價熱賣! |
詢價 |
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