絲?。?strong>G10；Package：SOD-123FL；SURFACE MOUNT SCHOTTKY DIODES

Features ? Low forward voltage drop ? Deal for automated placement ? Low power loss, high efficiency ? High surge current capability ? Lead free in compliance with EU RoHS 2.0 ? Green molding compound as per IEC 61249 standard ? AEC-Q101 qualified

文件：132.43 Kbytes 頁數(shù)：5 Pages

PANJIT

強茂

絲?。?strong>G10；Package：SMA；Zener Diodes

文件：1.54174 Mbytes 頁數(shù)：3 Pages

LUGUANG

魯光電子

絲?。?a target="_blank" title="Marking" href="/g1002/marking.html">G1002；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description The G1002 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：901.43 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導體

絲?。?a target="_blank" title="Marking" href="/g1002/marking.html">G1002；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description The G1002A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.11734 Mbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導體

絲?。?a target="_blank" title="Marking" href="/g1002l/marking.html">G1002L；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET

Description The G1002L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：888.83 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導體

絲印：G1003A；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET

Description The G1003A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：891.59 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導體

絲?。?a target="_blank" title="Marking" href="/g1003a/marking.html">G1003A；Package：SOT23-3L；N-Channel Enhancement MOSFET

Description The G1003A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protected. General Features High density cell design for ultra low Rdson Fully characterized avalanche volta

文件：745.97 Kbytes 頁數(shù)：6 Pages

YFWDIODE

佑風微

絲印：G1003B；Package：SOT-23-3；N-Channel Enhancement Mode Power MOSFET

Description The G1003B uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：780.45 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導體

絲?。?a target="_blank" title="Marking" href="/g1005/marking.html">G1005；Package：TO-92；PWM applications

The G1005 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. Application ● PWM applications ● Load switch ● Power management

文件：2.53766 Mbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導體

絲?。?a target="_blank" title="Marking" href="/g1006/marking.html">G1006；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET

Description The G1006LE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：891.32 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導體