絲印：G1003A；Package：SOT23-3L；N-Channel Enhancement MOSFET

Description The G1003A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protected. General Features High density cell design for ultra low Rdson Fully characterized avalanche volta

文件：745.97 Kbytes 頁數(shù)：6 Pages

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絲?。?strong>G1003A；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET

Description The G1003A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：891.59 Kbytes 頁數(shù)：6 Pages

GOFORD

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絲?。?strong>G1003A；Package：SOT-23；N- Enhancement Mode Field Effect Transistor

文件：1.30935 Mbytes 頁數(shù)：7 Pages

PJSEMI

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絲?。?strong>G1003A；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET

Description The G1003A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：891.59 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導體

絲?。?strong>G1003A；Package：SOT23-3L；N-Channel Enhancement MOSFET

Description The G1003A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protected. General Features High density cell design for ultra low Rdson Fully characterized avalanche volta

文件：745.97 Kbytes 頁數(shù)：6 Pages

YFWDIODE

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High density cell design for ultra low Rdson

Description The G1003A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protected. General Features ● VDSS RDS(ON)@10V (typ) ID 100V 135mΩ 5A ● High densi

文件：2.73284 Mbytes 頁數(shù)：5 Pages

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