絲印：G12；Package：SC-59；MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SK1399 is an N-channel vertical type MOS FET can be driven by 2.5 V power supply. The 2SK1399 is driven by low voltage and does not require consideration of driving current, it is suitable for appliances includ

文件：246.97 Kbytes 頁數(shù)：7 Pages

RENESAS

瑞薩

絲?。?strong>G12；Package：SMT6；Emitter common(dual digital transistors)

Features 1) Include two DTC323T transistors in a single SMT package. 2) Low VCE(sat). Ideal for muting circuit. 3) Can be used with IC = 600 mA

文件：41 Kbytes 頁數(shù)：1 Pages

ROHM

羅姆

絲?。?strong>G12；Package：SOT-23；Plastic-Encapsulate Diodes

FEATURES ? Bi-directional ESD protection of two lines ? Low reverse stand?off voltage: 12V ? Low reverse clamping voltage ? Low leakage current ? Fast response time ? JESD22-A114-B ESD Rating of class 3B per human body model ? IEC 61000-4-2 Level 4 ESD protection DESCRIPTION Low capacit

文件：4.43571 Mbytes 頁數(shù)：4 Pages

GWSEMI

唯圣電子

絲?。?strong>G12；Package：DO-214AC；Zener Diodes

文件：1.54174 Mbytes 頁數(shù)：3 Pages

LUGUANG

魯光電子

絲?。?strong>G12；Package：DFN；Fixed and Adjustable Current Limiting Power Distribution Switches

文件：3.94238 Mbytes 頁數(shù)：38 Pages

MICROCHIP

微芯科技

絲印：G120N02；Package：DFN3X3-8LDual；DUAL N-Channel Enhancement Mode Power MOSFET

Description The G120N02D32 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.09697 Mbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導體

絲?。?a target="_blank" title="Marking" href="/g120n03/marking.html">G120N03；Package：DFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Description The G120N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：717.41 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導體

絲印：G120N03；Package：DFN3X3-8LDual；DUAL N-Channel Enhancement Mode Power MOSFET

Description The G120N03D32 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：788.9 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導體

絲?。?a target="_blank" title="Marking" href="/g120p03/marking.html">G120P03；Package：SOP-8Dual；DUAL P-Channel Enhancement Mode Power MOSFET

Description The G120P03S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：830.93 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導體

絲?。?a target="_blank" title="Marking" href="/g120p06/marking.html">G120P06；Package：TO-263；P-Channel Enhancement Mode Power MOSFET

Description The G120P06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：599.26 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導體