絲?。?strong>G120；Package：DO-214AC；Zener Diodes

文件：1.54174 Mbytes 頁數(shù)：3 Pages

LUGUANG

魯光電子

絲?。?a target="_blank" title="Marking" href="/g120n02/marking.html">G120N02；Package：DFN3X3-8LDual；DUAL N-Channel Enhancement Mode Power MOSFET

Description The G120N02D32 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.09697 Mbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g120n03/marking.html">G120N03；Package：DFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Description The G120N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：717.41 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g120n03/marking.html">G120N03；Package：DFN3X3-8LDual；DUAL N-Channel Enhancement Mode Power MOSFET

Description The G120N03D32 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：788.9 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g120p03/marking.html">G120P03；Package：SOP-8Dual；DUAL P-Channel Enhancement Mode Power MOSFET

Description The G120P03S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：830.93 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g120p06/marking.html">G120P06；Package：TO-263；P-Channel Enhancement Mode Power MOSFET

Description The G120P06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：599.26 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲印：G120P06；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

Description The G120P06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：492.02 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g120bj/marking.html">G120BJ；Package：HSMT8AG；Pch -40V -12A Power MOSFET

Features 1) Small high-powered package reduces mounting area by 64% at a maximum 2) Realization of high mounting reliability by original terminal and plating treatment 3) AEC-Q101 Qualified Application ADAS/Info./Lighting/Body

文件：2.97057 Mbytes 頁數(shù)：14 Pages

ROHM

羅姆

絲?。?a target="_blank" title="Marking" href="/g120bk/marking.html">G120BK；Package：HSMT8AG；Nch 40V 12A Power MOSFET

Features 1) Small high-powered package reduces mounting area by 64% at a maximum 2) Realization of high mounting reliability by original terminal and plating treatment 3) AEC-Q101 Qualified Application ADAS/Info./Lighting/Body

文件：2.65207 Mbytes 頁數(shù)：14 Pages

ROHM

羅姆

絲?。?a target="_blank" title="Marking" href="/g120m65df2ag/marking.html">G120M65DF2AG；Package：Max247；Automotive-grade trench gate field-stop, 650 V, 120 A, low-loss, M series IGBT in a Max247 long leads package

Features ? AEC-Q101 qualified ? 6 μs of short-circuit withstand time ? VCE(sat) = 1.65 V (typ.) @ IC = 120 A ? Tight parameter distribution ? Safer paralleling ? Positive VCE(sat) temperature coefficient ? Low thermal resistance ? Soft and very fast recovery antiparallel diode ? Maximum j

文件：2.18639 Mbytes 頁數(shù)：14 Pages

STMICROELECTRONICS

意法半導(dǎo)體