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          首頁 >FSYE23A0D3>規(guī)格書列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          FSYE23A0D3

          Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

          The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K

          文件:57.92 Kbytes 頁數(shù):8 Pages

          INTERSIL

          FSL23A0D3

          6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs

          The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin

          文件:72.36 Kbytes 頁數(shù):8 Pages

          INTERSIL

          FSS23A0D3

          9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

          The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K

          文件:56.72 Kbytes 頁數(shù):8 Pages

          INTERSIL

          詳細(xì)參數(shù)

          • 型號(hào):

            FSYE23A0D3

          • 制造商:

            INTERSIL

          • 制造商全稱:

            Intersil Corporation

          • 功能描述:

            Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
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