<strong id="5lvfi"><dl id="5lvfi"></dl></strong>
      

        

      • <tfoot id="5lvfi"><menuitem id="5lvfi"></menuitem></tfoot>
        

        <th id="5lvfi"><progress id="5lvfi"></progress></th>
          <strong id="5lvfi"><form id="5lvfi"></form></strong>
          <strong id="5lvfi"><form id="5lvfi"></form></strong>
          

        1. <del id="5lvfi"></del>
          

          
  
          
  
          
    
  
          
  
          
    
    
    
    
          
  
          

          

          
    
          
    
            
          
                
          首頁
                >FSYE430D>規(guī)格書列表
                
          
            
          
                
          
                    
          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO
          
                    
          FSYE430D
          Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
          
The Discrete Products Operation of Intersil has developed a
series of Radiation Hardened MOSFETs specifically
designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects
(SEE), Single Event Gate Rupture (SEGR) in particular, is
combined with
          文件：58.2 Kbytes 頁數(shù)：8 Pages
          INTERSIL
          

          FSYE430D1
          Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
          
The Discrete Products Operation of Intersil has developed a
series of Radiation Hardened MOSFETs specifically
designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects
(SEE), Single Event Gate Rupture (SEGR) in particular, is
combined with
          文件：58.2 Kbytes 頁數(shù)：8 Pages
          INTERSIL
          

          FSYE430D3
          Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
          
The Discrete Products Operation of Intersil has developed a
series of Radiation Hardened MOSFETs specifically
designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects
(SEE), Single Event Gate Rupture (SEGR) in particular, is
combined with
          文件：58.2 Kbytes 頁數(shù)：8 Pages
          INTERSIL
          

          FSYE430D
          Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
          Renesas
          瑞薩
          

          
            
          
		
        
          
            
          
                
          詳細參數(shù)
          
            
          
            
            
            	
          • 型號：
            FSYE430D
          • 制造商：
            INTERSIL 
          • 制造商全稱：
            Intersil Corporation 
          • 功能描述：
            Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 
          
            
          
        
          
            
          供應商型號品牌批號封裝庫存備注價格
          
                
            
          
        
          
        
        
          
          
          
            
          相關規(guī)格書
          
            更多
          
          
          
        
          

        
          
          
          
            
          相關庫存
          
	        更多
          
          
          
        
          
    
          

          




            <strong id="5lvfi"><dl id="5lvfi"></dl></strong>
              

                

              • <tfoot id="5lvfi"><menuitem id="5lvfi"></menuitem></tfoot>
                

                <th id="5lvfi"><progress id="5lvfi"></progress></th>
                  <strong id="5lvfi"><form id="5lvfi"></form></strong>
                  <strong id="5lvfi"><form id="5lvfi"></form></strong>
                  

                1. <del id="5lvfi"></del>
                  

波多野结衣av在线免费观看
|
久草福利资源网
|
国产色情在线观看
|
欧美操逼虐待视频网
|
日一日射一射无码视频
|