首頁 >FSYE923A0D>規(guī)格書列表
| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
FSYE923A0D | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin 文件：70.28 Kbytes 頁數(shù)：8 Pages | INTERSIL | INTERSIL | |
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin 文件：70.28 Kbytes 頁數(shù)：8 Pages | INTERSIL | INTERSIL | ||
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin 文件：70.28 Kbytes 頁數(shù)：8 Pages | INTERSIL | INTERSIL | ||
FSYE923A0D | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs | Renesas 瑞薩 | Renesas |
詳細(xì)參數(shù)
- 型號：
FSYE923A0D
- 制造商：
INTERSIL
- 制造商全稱：
Intersil Corporation
- 功能描述：
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|
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