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首頁 >FSYE13A0D1>規(guī)格書列表

型號	下載訂購	功能描述	制造商上傳企業(yè)	LOGO
FSYE13A0D1	文件：55.68 Kbytes Page：8 Pages	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K 文件：55.68 Kbytes 頁數(shù)：8 Pages	INTERSIL	INTERSIL
FSL13A0D1	文件：71.78 Kbytes Page：8 Pages	9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K 文件：71.78 Kbytes 頁數(shù)：8 Pages	INTERSIL	INTERSIL
FSS13A0D1	文件：71.31 Kbytes Page：8 Pages	2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin 文件：71.31 Kbytes 頁數(shù)：8 Pages	INTERSIL	INTERSIL

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