| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
FSYC260D | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combi 文件：48.83 Kbytes 頁數(shù)：8 Pages | INTERSIL | INTERSIL | |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combi 文件：48.83 Kbytes 頁數(shù)：8 Pages | INTERSIL | INTERSIL | ||
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combi 文件：48.83 Kbytes 頁數(shù)：8 Pages | INTERSIL | INTERSIL | ||
FSYC260D | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs | Renesas 瑞薩 | Renesas |
詳細(xì)參數(shù)
- 型號：
FSYC260D
- 制造商：
INTERSIL
- 制造商全稱：
Intersil Corporation
- 功能描述：
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
HAR |
05+ |
原廠原裝 |
4290 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢價 | ||
HAR |
23+ |
65480 |
詢價 | ||||
INTERSIL |
14+ |
原廠封裝 |
9 |
宇航IC只做原裝假一罰十 |
詢價 | ||
INTERSIL |
25+ |
N/A |
90000 |
一級代理商進(jìn)口原裝現(xiàn)貨、價格合理 |
詢價 | ||
INTERSIL |
24+ |
10 |
全新原裝 |
詢價 | |||
INTERSIL |
2015+ |
99 |
原裝正品 |
詢價 |
相關(guān)規(guī)格書
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相關(guān)庫存
更多- FSYC260D3
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