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          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          FQD2N60CTM

          絲?。?strong>FQD2N60C;Package:D-PAK;N-Channel QFET? MOSFET 600 V, 1.9 A, 4.7 廓

          Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high aval

          文件:979.34 Kbytes 頁(yè)數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          FQD2N60CTM

          絲?。?strong>FQD2N60C;Package:D-PAK;N-Channel QFET? MOSFET 600 V, 1.9 A, 4.7 廓

          Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high aval

          文件:979.34 Kbytes 頁(yè)數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          FQD2N60C

          N-Channel QFET? MOSFET 600 V, 1.9 A, 4.7 廓

          Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high aval

          文件:979.34 Kbytes 頁(yè)數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          FQD2N60C

          N-Channel QFET MOSFET

          Description These N-Channel enhancement mode power field effect transistors are produced using Corise Semiconductor?s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, an

          文件:842.74 Kbytes 頁(yè)數(shù):8 Pages

          KERSEMI

          FQD2N60C

          600V N-Channel MOSFET

          Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

          文件:617.97 Kbytes 頁(yè)數(shù):9 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          FQD2N60C

          N-Channel QFET? MOSFET

          Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

          文件:742.85 Kbytes 頁(yè)數(shù):9 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          FQD2N60C

          N-Channel QFET? MOSFET

          Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor?’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high

          文件:748.29 Kbytes 頁(yè)數(shù):9 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          FQD2N60CTF

          N-Channel QFET? MOSFET

          Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor?’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high

          文件:748.29 Kbytes 頁(yè)數(shù):9 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          FQD2N60CTM

          N-Channel QFET? MOSFET

          Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

          文件:742.85 Kbytes 頁(yè)數(shù):9 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          FQD2N60C

          600V N-Channel MOSFET

          文件:863.86 Kbytes 頁(yè)數(shù):9 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          詳細(xì)參數(shù)

          • 型號(hào):

            FQD2N60C

          • 功能描述:

            MOSFET N-CH/600V/2A/A.QFET

          • RoHS:

          • 制造商:

            STMicroelectronics

          • 晶體管極性:

            N-Channel

          • 汲極/源極擊穿電壓:

            650 V

          • 閘/源擊穿電壓:

            25 V

          • 漏極連續(xù)電流:

            130 A 電阻汲極/源極

          • RDS(導(dǎo)通):

            0.014 Ohms

          • 配置:

            Single

          • 安裝風(fēng)格:

            Through Hole

          • 封裝/箱體:

            Max247

          • 封裝:

            Tube

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
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          更多FQD2N60C供應(yīng)商 更新時(shí)間2026-1-19 9:18:00
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