絲?。?strong>FFSH2065BDN；Package：TO-247-3LD；Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D2, TO-247-3L

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

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絲印：FFSH2065BDN；Package：TO-247-3LD；Silicon Carbide Schottky Diode, 650 V, 20 A

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Silicon Carbide (SiC) Schottky Diode -?EliteSiC, 20A, 650V, D2, TO-247-3L

EliteSiC?Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generat ? Max Junction Temperature 175C\n? Avalanche Rated 49 mJ\n? High Surge Current Capacity\n? Positive Temperature Coefficient\n? No Reverse Recovery / No Forward Recovery\n? Low Vf @ TJ:175 °C;

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Package：TO-247-3；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 陣列 描述：650V 20A SIC SBD GEN1.5

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