Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D2,?Power88

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the ? Max Junction Temperature\n? Tj = 175 °C\n? High Surge Current Capacity\n? Positive Temperature Coefficient\n? No Reverse Recovery / No Forward Recovery;

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絲?。?strong>FFSM2065B；Package：PQFN；Silicon Carbide Schottky Diode

文件：210.1 Kbytes 頁數(shù)：6 Pages

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Package：4-PowerTSFN；包裝：管件 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述：SILICON CARBIDE DIODE 650V 20A P

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Silicon Carbide Schottky Diode 650 V, 20 A

文件：294.38 Kbytes 頁數(shù)：6 Pages

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Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D2, TO-220-2L

Features ? Max Junction Temperature 175°C ? Avalanche Rated 94 mJ ? High Surge Current Capacity ? Positive Temperature Coefficient ? Ease of Paralleling ? No Reverse Recovery / No Forward Recovery ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant Applications ?

文件：269.8 Kbytes 頁數(shù)：6 Pages

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SiC Schottky Barrier Diode

FEATURES · High Surge Current Capacity · No Reverse Recovery/No Forward Recovery · Ease of Paralleling · No Reverse Recovery APPLICATIONS · General Purpose · SMPS, Solar Inverter, UPS · Power Switching Circuits

文件：426.58 Kbytes 頁數(shù)：3 Pages

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