絲?。?strong>FFSP05120A；Package：TO-220-2LD；Silicon Carbide Schottky Diode 1200 V, 5 A

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

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Silicon Carbide Schottky Diode

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Silicon Carbide Schottky Diode 1200 V, 5 A

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

文件：304.78 Kbytes 頁數(shù)：6 Pages

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SiC 二極管，1200V，5A，TO-220-2

Silicon Carbide (SiC) Schottky Diodes use a completely new technology thatprovides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermalperformance sets Silicon Carbide as the next gener ? Max Junction Temperature 175 °C\n? High Surge Current Capacity\n? Positive Temperature Coefficient\n? No Reverse Recovery / No Forward Recovery;

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Package：TO-220-2；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述：DIODE SCHOTTKY 1.2KV TO220-2

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