Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 650 V, D2,?Power88

Silicon Carbide (SiC) Schottky Diodes use a completely new technology thatprovides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermalperformance sets Silicon Carbide as the next gener ? Max Junction Temperature\n? Tj = 175 °C\n? High Surge Current Capacity\n? Positive Temperature Coefficient\n? No Reverse Recovery / No Forward Recovery;

ONSEMI

安森美半導(dǎo)體

絲?。?strong>FFSM0865B；Package：PQFN；Silicon Carbide Schottky Diode

文件：224.28 Kbytes 頁數(shù)：6 Pages

ONSEMI

安森美半導(dǎo)體

Package：4-PowerTSFN；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述：SILICON CARBIDE DIODE 650V 8A PQ

ONSEMI

安森美半導(dǎo)體

Silicon Carbide Schottky Diode 650 V, 8 A

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

文件：234.13 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

Schottky Barrier Rectifier

FEATURES ·High Surge Current Capacity ·Easy Of Paralleling ·No Reverse Recovery APPLICATIONS ·SMPS ·UPS ·Power Switching Circuits

文件：272.97 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

TREK P0865

APPLICATIONS ? Charge accumulation monitoring of the LCD production processes ? Monitoring surface potentials in the electrostatic painting process ? Research and development in the electrophotographic process ? Measuring electrostatic potentials on polymers, rubber, fabrics, and paper

文件：136.17 Kbytes 頁數(shù)：4 Pages

ADVANCEDENERGY

先進(jìn)能源工業(yè)