30V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “l(fā)ow side” synchronous rectifier operation, providing an extremely low RDS

文件：171.4 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導體

30V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “l(fā)ow side” synchronous rectifier operation, providing an extremely low RDS

文件：175.18 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導體

30V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “l(fā)ow side” synchronous rectifier operation, providing an extremely low RDS(O

文件：192.85 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導體

30V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “l(fā)ow side” synchronous rectifier operation, providing an extremely low RDS(O

文件：167.43 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導體

N-Channel Logic Level PowerTrench MOSFET

General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and batt

文件：205.75 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導體

絲印：FDS8638；Package：SO-8；N-Channel PowerTrench? MOSFET 40 V, 18 A, 4.3 mΩ

Features Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A Max rDS(on) = 5.4 mΩ at VGS = 4.5 V, ID = 16 A High performance trench technology for extremely low rDS(on) 100% UIL Tested RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s

文件：373.21 Kbytes 頁數(shù)：8 Pages

ONSEMI

安森美半導體

絲?。?a target="_blank" title="Marking" href="/fds8878/marking.html">FDS8878；Package：SOP-8；30V N-Channel MOSFET

Features High performance trench technology for extremely low rDS(on) Low gate charge High power and current handling capability RoHS Compliant VDS (V) =30V ID = 10.2A (VGS = 10V) RDS(ON)

文件：598.24 Kbytes 頁數(shù)：9 Pages

UMW

友臺半導體

絲?。?a target="_blank" title="Marking" href="/fds8884/marking.html">FDS8884；Package：SOP-8；30V N-Channel MOSFET

Features Low gate charge VDS (V) = 30V ID = 8.5 A (VGS = 10V) RDS(ON)

文件：532.33 Kbytes 頁數(shù)：7 Pages

UMW

友臺半導體

絲印：FDS89161LZ；Package：SO-8；Dual N-Channel Shielded Gate PowerTrench? MOSFET 100 V, 2.7 A, 105 mΩ

Features Shielded Gate MOSFET Technology Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A Max rDS(on) = 160 mΩ at VGS = 4.5 V, ID = 2.1 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package CDM ESD

文件：399.31 Kbytes 頁數(shù)：8 Pages

ONSEMI

安森美半導體

絲?。?a target="_blank" title="Marking" href="/fds8958/marking.html">FDS8958；Package：SOP-8；NP-Channel MOSFET

Features N-Channel VDS (V) = 30V ID = 7A (VGS = 10V) RDS(ON)

文件：587.09 Kbytes 頁數(shù)：9 Pages

UMW

友臺半導體