絲?。?strong>FCH060N80；Package：TO-247-3LD；MOSFET ??N-Channel, SUPERFET II 800 V, 58 A, 60 m

Description SUPERFET II MOSFET is ON Semiconductor’s brand?new high voltage super?junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on?resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide super

文件：496.41 Kbytes 頁數(shù)：10 Pages

ONSEMI

安森美半導體

絲印：FCH060N80；Package：TO-247-3LD；MOSFET ??N-Channel, SUPERFET II 800 V, 58 A, 60 m

Description SUPERFET II MOSFET is ON Semiconductor’s brand?new high voltage super?junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on?resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide super

文件：496.41 Kbytes 頁數(shù)：10 Pages

ONSEMI

安森美半導體

MOSFET ??N-Channel, SUPERFET II 800 V, 58 A, 60 m

Description SUPERFET II MOSFET is ON Semiconductor’s brand?new high voltage super?junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on?resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide super

文件：496.41 Kbytes 頁數(shù)：10 Pages

ONSEMI

安森美半導體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 58A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 60mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：372.25 Kbytes 頁數(shù)：2 Pages

ISC

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