絲?。?strong>FCPF11N60F；Package：TO-220F；N-Channel SuperFET? FRFET? MOSFET 600 V, 11 A, 380 mΩ

Features ? 600 V @ TJ = 150°C ? Typ. RDS(on) = 320 mΩ ? Fast Recovery Type (trr = 120 ns) ? Ultra Low Gate Charge (Typ. Qg = 40 nC) ? Low Effective Output Capacitance (Typ. Coss(eff.) = 95 pF) ? 100% Avalanche Tested ? RoHS compliant Applications ? LCD/LED/PDP TV ? Solar Inverter

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ONSEMI

安森美半導(dǎo)體

絲?。?strong>FCPF11N60F；Package：TO-220F；N-Channel SuperFET? FRFET? MOSFET 600 V, 11 A, 380 mΩ

Features ? 600 V @ TJ = 150°C ? Typ. RDS(on) = 320 mΩ ? Fast Recovery Type (trr = 120 ns) ? Ultra Low Gate Charge (Typ. Qg = 40 nC) ? Low Effective Output Capacitance (Typ. Coss(eff.) = 95 pF) ? 100% Avalanche Tested ? RoHS compliant Applications ? LCD/LED/PDP TV ? Solar Inverter

文件：470.65 Kbytes 頁數(shù)：10 Pages

ONSEMI

安森美半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 11A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.38Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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ISC

無錫固電

600V N-Channel MOSFET

Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, pro

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FAIRCHILD

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DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET?II MOSFET is Fairchild Semiconductor?’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

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FAIRCHILD

仙童半導(dǎo)體