絲?。?strong>FCPF260N60E；Package：TO-220F；MOSFET – N-Channel, SUPERFET II 600 V, 15 A, 260 m

Description SUPERFET II MOSFET is ON Semiconductor’s brand?new high voltage super?junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on?resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide super

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ONSEMI

安森美半導(dǎo)體

絲?。?strong>FCPF260N60E；Package：TO-220F；MOSFET – N-Channel, SUPERFET II 600 V, 15 A, 260 m

Description SUPERFET II MOSFET is ON Semiconductor’s brand?new high voltage super?junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on?resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide super

文件：268.69 Kbytes 頁數(shù)：10 Pages

ONSEMI

安森美半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 15A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.26Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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ISC

無錫固電

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET?II MOSFET is Fairchild Semiconductor?’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

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FAIRCHILD

仙童半導(dǎo)體

600V N-Channel MOSFET

Description SuperFET?II is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, pro

文件：283.1 Kbytes 頁數(shù)：10 Pages

FAIRCHILD

仙童半導(dǎo)體